Over the past few years, single-photon generation has been realized in numerous systems: single molecules, quantum dots, diamond colour centres and others. The generation and detection of single photons play a central role in the experimental foundation of quantum mechanics and measurement theory. An efficient and high-quality single-photon source is needed to implement quantum key distribution, quantum repeaters and photonic quantum information processing. Here we report the identification and formation of ultrabright, room-temperature, photostable single-photon sources in a device-friendly material, silicon carbide (SiC). The source is composed of an intrinsic defect, known as the carbon antisite-vacancy pair, created by carefully optimized electron irradiation and annealing of ultrapure SiC. An extreme brightness (2×10(6) counts s(-1)) resulting from polarization rules and a high quantum efficiency is obtained in the bulk without resorting to the use of a cavity or plasmonic structure. This may benefit future integrated quantum photonic devices.

Present-day implementations of quantum information processing rely on two widely different types of quantum bits (qubits). On the one hand, microscopic systems such as atoms or spins are naturally well decoupled from their environment and as such can reach extremely long coherence times [1,2]; on the other hand, more macroscopic objects such as superconducting circuits are strongly coupled to electromagnetic fields, making them easy to entangle [3,4] although with shorter coherence times [5,6]. It thus seems appealing to combine the two types of systems in hybrid structures that could possibly take the best of both worlds. Here we report the first experimental realization of a hybrid quantum circuit in which a superconducting qubit of the transmon type [5,7] is coherently coupled to a spin ensemble consisting of nitrogen-vacancy (NV) centers in a diamond crystal [8] via a frequency-tunable superconducting resonator [9] acting as a quantum bus. Using this circuit, we prepare arbitrary superpositions of the qubit states that we store into collective excitations of the spin ensemble and retrieve back later on into the qubit. We demonstrate that this process preserves quantum coherence by performing quantum state tomography of the qubit. These results constitute a first proof of concept of spin-ensemble based quantum memory for superconducting qubits [10][11][12]. As a landmark of the successful marriage between a superconducting qubit and electronic spins, we detect with the qubit the hyperfine structure of the NV center.Superconducting qubits have been successfully coupled to electromagnetic [13] as well as mechanical [14] resonators; but coupling them to microscopic systems in a controlled way has up to now remained an elusive perspective -even though qubits sometimes turn out to be coupled to unknown and uncontrolled microscopic degrees of freedom with relatively short coherence times [15]. Whereas the coupling constant g of one individual microscopic system to a superconducting circuit is usually too weak for quantum information applications, ensembles of N such systems are coupled with a constant g √ N enhanced by collective effects.This makes possible to reach a regime of strong coupling between one collective variable of the ensemble and the circuit. This collective variable, which behaves in the low excitation limit as a harmonic oscillator, has been proposed [10-12] as a quantum memory for storing the state of superconducting qubits. Experimentally, the strong coupling between an ensemble of electronic spins and a superconducting resonator has been demonstrated 2 spectroscopically [16][17][18], and the storage of a microwave field into collective excitations of a spin ensemble has been observed very recently [19,20]. These experiments were however carried out in a classical regime since the resonator and spin ensemble behaved as two coupled harmonic oscillators driven by large microwave fields. In the perspective of building a quantum memory, it is instead necessary to perform experiments at the level of a...

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Spins of negatively charged nitrogen-vacancy (NV − ) defects in diamond are among the most promising candidates for solid-state qubits. The fabrication of quantum devices containing these spin-carrying defects requires position-controlled introduction of NV − defects having excellent properties such as spectral stability, long spin coherence time, and stable negative charge state. Nitrogen ion implantation and annealing enable the positioning of NV − spin qubits with high precision, but to date, the coherence times of qubits produced this way are short, presumably because of the presence of residual radiation damage. In the present work, we demonstrate that a high temperature annealing at 1000• C allows 2 millisecond coherence times to be achieved at room temperature. These results were obtained for implantation-produced NV − defects in a high-purity, 99.99% 12 C enriched single crystal chemical vapor deposited diamond. We discuss these remarkably long coherence times in the context of the thermal behavior of residual defect spins. [Published in Physical Review B 88, 075206 (2013)]

The field-effect mobility of a liquid-crystalline semiconducting polymer, poly(2,5-bis(3-hexadecylthiophene-2-yl)thieno[3,2-b]thiophene) (PB16TTT), has depended significantly on the surface energies of self-assembled monolayers (SAMs) formed on insulating layers. Using a SAM with fluoroalkyl groups, with a low surface energy of 13.3 mN/m, the mobility of PB16TTT reached as high as 1 cm2/V s. These results indicate that an edge-on orientation of the polymer chains progresses more favorably on the surfaces with low surface energies via the liquid-crystalline phase.