Acceptor reactivation kinetics in heavily carbon-doped GaAs epitaxial layers

Abstract

The reactivation kinetics of the acceptor behavior of carbon in GaAs layers has been studied. The reactivation was achieved by ex situ rapid thermal annealing. To follow the carbon reactivation process, a multistage annealing experiment was performed, with changes in the sample carrier concentration monitored at each stage. An analysis of these data indicates that carbon reactivation follows a first-order kinetics process that can be explained by a model which includes the effects of dopant repassivation by hydrogen retrapping during hydrogen out-diffusion, and a dependence of the attempt frequency with the carbon concentration. The reactivation occurs with an activation energy of 1.41 eV.

Influence of growth parameters on the composition and impurity levels of intrinsically carbon doped AlxGa1−xAs

“…Probably, carbon is also incorporated at interstitial sites or on element III positions. Interstitial carbon could act as scattering centers and would give a decrease of the hole mobility [5]. Indeed, it was found that the hole mobility at similar carrier concentrations decreases with increasing T G [39].…”

“…In the past few years, the development of new doping methods [3], better control of the doping level [4] and new insights in the reactivation of carbon [5,6] have further improved its suitability as a way of obtaining p-type doped layers in devices [7,8]. A common way of carbon doping in Al x Ga 1Àx As (x40) is the use of an independent carbon precursor such as carbon tetrachloride (CCl 4 ) [9] and carbon tetrabromide (CBr 4 ) [10].…”

Эпитаксиальные твердые растворы Al-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-As : Mg с различным типом проводимости

“…Разработка новых методов легирования [12], включа-ющих точный контроль уровня легирования [13] и новые способы реактивации примесей [14,15], привела к значи-тельному улучшению качества эпитаксиальных слоев и, как следствие, расширила сферу их применения [16,17]. Основными легирующими примесями в A III B V являются углерод и кремний.…”

Hydrogen-related defects in InGaP/GaAs heterojunction bipolar transistors

“…However, heavy carbon doping over 10 19 cm À3 by metal-organic chemical vapor deposition (MOCVD) incorporates large amounts of hydrogen atoms in the base layer [3,4]. The presence of hydrogen atoms affects the device performance [5][6][7][8][9][10][11]. The current gain increases and stabilizes after a current injection for a few seconds, which is called short-term gain-drift [5][6][7][8][9].…”