2016 Conference on Precision Electromagnetic Measurements (CPEM 2016) 2016
DOI: 10.1109/cpem.2016.7540620
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Accuracy verification of single-electron pumps with 0.2 ppm uncertainty

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Cited by 2 publications
(5 citation statements)
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“…The experimental procedure and the following data analysis were performed along the lines explained in [6]. The optimal working point of the pump with ) and the type B contribution (0.084 µA A −1 ) from table 1 (raw data already used in [8]).…”
Section: Measurements and Resultsmentioning
confidence: 99%
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“…The experimental procedure and the following data analysis were performed along the lines explained in [6]. The optimal working point of the pump with ) and the type B contribution (0.084 µA A −1 ) from table 1 (raw data already used in [8]).…”
Section: Measurements and Resultsmentioning
confidence: 99%
“…These measurements comprise variations of magnetic flux density, bias and gate voltages, and pump driving frequency, all of them being relevant operational parameters for GaAs-based SET pumps. Parts of the data shown here were already used in conference digest papers [7,8].…”
Section: Introductionmentioning
confidence: 99%
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“…At the present time, the most practically useful combination of accuracy and high electron pumping rate has been achieved using electrostatically gated semiconductor quantum dots (QDs) operated as non-adiabatic tunable-barrier pumps [3] in the low-temperature decay cascade regime [4]. Using state-of-the-art current measurement techniques [5,6], there have been several reports of pumped current accurate at the part-per-million (ppm) level or better, at pump repetition rates in the range 0.5 GHz f 1 ⩽ ⩽ GHz, generating current 80 pA = I ef 160 P ⩽ ⩽ pA [5,[7][8][9][10][11], where e is the elementary charge. These studies were performed on a variety of device architectures: etch-defined [5,8,10] and gate-defined [7] QDs in GaAs heterostructures, and silicon nano-wire MOSFETs [9].…”
Section: Introductionmentioning
confidence: 99%
“…Using state-of-the-art current measurement techniques [5,6], there have been several reports of pumped current accurate at the part-per-million (ppm) level or better, at pump repetition rates in the range 0.5 GHz f 1 ⩽ ⩽ GHz, generating current 80 pA = I ef 160 P ⩽ ⩽ pA [5,[7][8][9][10][11], where e is the elementary charge. These studies were performed on a variety of device architectures: etch-defined [5,8,10] and gate-defined [7] QDs in GaAs heterostructures, and silicon nano-wire MOSFETs [9]. While very promising for the metrological application of electron pumps, most of these studies were performed on carefully tuned devices.…”
Section: Introductionmentioning
confidence: 99%