Accurate Analysis of Schottky Barrier Height in Au/2H–MoTe2 Atomically Thin Film Contact

Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe2 Field-Effect Transistors

“…Benchmarking plots of p-type MoTe 2 with various contact electrodes. Performance comparison include FETs with metal contacts prepared by conventional 3D metal and 2D metal. ,,,− (h) Comparison of R C values as a function of metal work function and (i) I on / I off and field-effect hole mobility (μ h ) values of our PtTe 2 /MoTe 2 (red) with other MoTe 2 transistors using 3D metal or 2D metal.…”

“…(f) Nonlinearity of I DS – V DS for the MoTe 2 /PtTe 2 contacts. The data are extracted at a drain–source voltage of 0.5 V with a gate voltage of −60 V. (g) Comparison of the SBHs of few-layer MoTe 2 FETs with 3D top contacts (Ti, Cr, Au, Pd, and Pt; solid) and with 2D contacts (1-T′MoTe 2 , PdTe 2 , and graphene; open). ,,,− The extracted SBHs of PtTe 2 /MoTe 2 (red) and Au/MoTe 2 (blue) are indicated by colored symbols.…”