Accurate and efficient circuit simulation with lumped-element FDTD technique

Ciampolini, P.; Mezzanotte, P.; Roselli, L.; Sorrentino, R.

doi:10.1109/22.556448

Cited by 99 publications

(38 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Recently, the progress in numerical device simulation and the development of electromagnetic analysis tools, together with the availability of powerful workstations, have led to modeling approaches aimed to the numerical solution of the electromagnetic and electron transport problems in a consistent way [13]- [17]. Although potentially accurate, these models are still in a preliminary phase and their application to practical problems such as device scaling, circuit simulation, etc., may be difficult, also taking into account their computational cost.…”

mentioning

confidence: 99%

A new approach to FET model scaling and MMIC design based on electromagnetic analysis

Cidronali

Collodi²,

Vannini³

et al. 1999

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

Abstract-A new approach, using electromagnetic analysis, is proposed for field-effect transistor model scaling and monolithicmicrowave integrated-circuit (MMIC) design. It is based on an empirical distributed modeling technique where the active device is described in terms of an external passive structure connected to a suitable number of internal active sections. On this basis, an equivalent admittance matrix per gate unit width is obtained which, as confirmed by experimental results provided in this paper, is consistent with simple scaling rules. The same technique can also be adopted for a "global approach" to MMIC design where complex electromagnetic phenomena are also taken into account. An example of application concerning this aspect is presented.

show abstract

mentioning

confidence: 99%

A new approach to FET model scaling and MMIC design based on electromagnetic analysis

Cidronali

Collodi²,

Vannini³

et al. 1999

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

show abstract

“…Equation (3) shows that, for an isotropic radiator, the total power radiated is simply the power density at a particular distance multiplied by the area of the sphere, radius , enclosing the radiator. We can now calculate the measured and simulated effective conversion losses.…”

Section: Large-signal Resultsmentioning

confidence: 99%

“…The model used for the diode has been obtained from an HP application note [20]. A detailed description of the LE-FDTD implementation of the large-signal diode model without parasitics is given in [3]. In this paper, the package parasitics are included and their values are tuned to match the measured performance of a diode mounted in series in a microstrip line.…”

Section: Diode Model Validationmentioning

confidence: 99%

“…To realize optimum designs for these circuits, it is essential to simulate the entire circuit, both active and radiating parts concurrently. A promising method for achieving this is the lumped-element (LE) finite-difference time-domain (FDTD) method [2], [3]. This approach allows for the incorporation of lumped element models including passive, active, and nonlinear devices directly into the traditional FDTD grid structure [4], [5].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Simulation and measurement of quasi-optical multipliers

Cryan

Helbing²,

Alimenti

et al. 2001

IEEE Trans. Microwave Theory Techn.

Self Cite

View full text Add to dashboard Cite

“…It is more accurate over the older Ebers-Moll BJT model as it considers the secondary effects of the BJT device physics. Good coverage of BJT modeling using Ebers-Moll model is provided in [2,3]. Current methods of incorporating nonlinear components in FDTD usually result in nonlinear update equations for the electric field [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Modeling of Bipolar Junction Transistor in FDTD Simulation of Printed Circuit Board

Kung¹,

Chuah²

2002

PIER

View full text Add to dashboard Cite

Abstract-A simple and efficient approximate method to incorporate nonlinear bipolar junction transistor (BJT) into Finite-Difference Time-Domain (FDTD) framework is presented. This method applies Taylor expansion on the nonlinear transport equations of the BJT based on Gummel-Poon model [5]. The results are two coupled one-step explicit finite difference schemes for the electromagnetic fields in the vicinity of the BJT, which can be solved easily. A simulation example is carried out for a power amplifier and the result compares well with the measurement. A two-step simulation scheme is introduced to hasten the process of reaching transient steady state. Finally, brief comments on treating the FDTD framework as a dynamical system is included. This perspective is useful for analyzing the stability of FDTD framework with nonlinear lumped elements.

show abstract

Accurate and efficient circuit simulation with lumped-element FDTD technique

Cited by 99 publications

References 8 publications

A new approach to FET model scaling and MMIC design based on electromagnetic analysis

A new approach to FET model scaling and MMIC design based on electromagnetic analysis

Simulation and measurement of quasi-optical multipliers

Modeling of Bipolar Junction Transistor in FDTD Simulation of Printed Circuit Board

Contact Info

Product

Resources

About