Accurate and reproducible in-depth observation of organic–inorganic hybrid materials using FIB-TOF-SIMS

Iida, Shin‐ichi; Carr, David M.; Fisher, Gregory L.; Miyayama, Takuya

doi:10.1116/1.5013670

Cited by 12 publications

(17 citation statements)

References 8 publications

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“…Added to Figure are similar measurements extracted from Figure of Iida et al's detailed study for the Ar + GCIB cleaning of flat Ga + implanted, PC at 48° incidence. These are shown as orange circles and are for cleaning using 20‐keV Ar 2500 + at 40° incidence.…”

Section: Resultsmentioning

confidence: 92%

“…For this condition, the sputtering yield of pure PC is 60 nm 3 . Iida et al do not give the Ga + profiles but only the Ar + GCIB recovery dose as a function of the implanted Ga + dose. For our purposes, to determine the effective sputtering yield, we use the SRIM‐calculated Ga + implantation depth in PC and a fraction of 57% of the recovery dose to allow for the difference between their measure of the recovery dose and the centroid of the Ga + profile, assumed to be of a similar scaling to our data for PS.…”

Section: Resultsmentioning

confidence: 99%

“…The yellow and blue squares are for FIB‐milled sections of PS, whereas the pink‐red square is for the FIB‐milled section of poly(methyl methacrylate) (PMMA) . The orange data are from Iida et al's detailed study for Ga + implantation in the surface of poly(carbonate) (PC). The solid lines are descriptions using Equation with the parameter A increasing with G as described in the text.…”

Section: Resultsmentioning

confidence: 99%

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Argon cluster cleaning of Ga⁺ FIB‐milled sections of organic and hybrid materials

Tiddia

Seah

Shard

et al. 2018

Surface & Interface Analysis

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Secondary ion mass spectrometry studies have been made of the removal of the degraded layer formed on polymeric materials when cleaning focused ion beam (FIB)-sectioned samples comprising both organic and inorganic materials with a 30-keV Ga + FIB. The degraded layer requires a higher-than-expected Ar gas cluster ion beam (GCIB) dose for its removal, and it is shown that this arises from a significant reduction in the layer sputtering yield compared with that for the undamaged polymer. Stopping and Range of Ions in Matter calculations for many FIB angles of incidence on flat polymer surfaces show the depth of the damage and of the implantation of the Ga + ions, and these are compared with the measured depth profiles for Ga + -implanted flat polymer surfaces at several angles of incidence using an Ar + GCIB. The Stopping and Range of Ions in Matter depth and the measured dose give the sputtering yield volume for this damaged and Ga +implanted layer. These, and literature yield values for Ga + damaged layers, are combined on a plot showing how the changing sputtering yield is related to the implanted Ga density for several polymer materials. This plot contains data from both the model flat poly(styrene) surfaces and FIB-milled sections showing that these 2 surfaces have the same yield reduction. The results show that the damaged and Ga + -implanted layer's sputtering rate,after FIB sectioning, is 50 to 100 times lower than for undamaged polymers and that it is this reduction in sputtering rate, rather than any development of microtopography, that causes the high Ar + GCIB dose required for cleaning these organic surfaces.

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Section: Resultsmentioning

confidence: 92%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Argon cluster cleaning of Ga⁺ FIB‐milled sections of organic and hybrid materials

Tiddia

Seah

Shard

et al. 2018

Surface & Interface Analysis

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“…TOF‐SIMS is a powerful analysis technique which allows us to directly observe molecular information. Furthermore, after the advent of the argon‐gas cluster ion beam (Ar‐GCIB), the combination of bismuth cluster and Ar‐GCIB has enabled determination of three‐dimensional molecular distributions with high spatial resolution . Presently, Bi/Ar‐GCIB dual‐beam depth profiling is a common and indispensable analysis technique for characterization of OLED devices .…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, after the advent of the argon-gas cluster ion beam (Ar-GCIB), 6,7 the combination of bismuth cluster and Ar-GCIB has enabled determination of three-dimensional molecular distributions with high spatial resolution. 8,9 Presently, Bi/Ar-GCIB dual-beam depth profiling is a common and indispensable analysis technique for characterization of OLED devices. 10 However, in general, an OLED has five to seven organic layers, and it is often observed that the fragment ions interfere with each other and confuse the interlayer boundaries because it cannot be known a priori from which molecule (s) the fragment ions arise.…”

Section: Introductionmentioning

confidence: 99%

Time‐of‐flight secondary ion tandem mass spectrometry depth profiling of organic light‐emitting diode devices for elucidating the degradation process

Iida

Murakami

Kurosawa

et al. 2020

Rapid Comm Mass Spectrometry

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Rationale Organic light‐emitting diode (OLED) products based on display applications have become popular in the past 10 years, and new products are being commercialized with rapid frequency. Despite the many advantages of OLEDs, these devices still have a problem concerning lifetime. To gain an understanding of the degradation process, the authors have investigated the molecular information for deteriorated OLED devices using time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS). Methods TOF‐SIMS depth profiling is an indispensable method for evaluating OLED devices. However, the depth profiles of OLEDs are generally difficult due to the mass interference among organic compounds, including degradation products. In this study, the tandem mass spectrometry (MS/MS) depth profiling method was used to characterize OLED devices. Results After degradation, defects comprised of small hydrocarbons were observed. Within the defect area, the diffusion of all OLED compounds was also observed. It is supposed that the source of the small hydrocarbons derives from decomposition of the OLED compounds and/or contaminants at the ITO interface. Conclusions The true compound distributions have been determined using MS/MS depth profiling methods. The results suggest that luminance decay is mainly due to the decomposition and diffusion of OLED compounds, and that OLED decomposition may be accelerated by adventitious hydrocarbons present at the ITO surface.

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Characterization of polymeric surfaces and interfaces using time‐of‐flight secondary ion mass spectrometry

Mei

Laws

Terlier

et al. 2021

Journal of Polymer Science

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Time-of-flight secondary ion mass spectrometry (ToF-SIMS) is used for chemical analysis of surfaces. ToF-SIMS is a powerful tool for polymer science because it detects a broad mass range with good mass resolution, thereby distinguishing between polymers that have similar elemental compositions and/or the same types of functional groups. Chemical labeling techniques that enhance contrast, such as deuterating or staining one constituent, are generally unnecessary. ToF-SIMS can generate both two-dimensional images and three-dimensional depth profiles, where each pixel in an image is associated with a complete mass spectrum. This Review begins by introducing the principles of ToF-SIMS measurements, including instrumentation, modes of operation, strategies for data analysis, and strengths/limitations when characterizing polymer surfaces. The sections that follow describe applications in polymer science that benefit from characterization by ToF-SIMS, including thin films and coatings, polymer blends, composites, and electronic materials. The examples selected for discussion showcase the three standard modes of operation (spectral analysis, imaging, and depth profiling) and highlight practical considerations that relate to experimental design and data processing. We conclude with brief comments about broader opportunities for ToF-SIMS in polymer science.

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Accurate and reproducible in-depth observation of organic–inorganic hybrid materials using FIB-TOF-SIMS

Cited by 12 publications

References 8 publications

Argon cluster cleaning of Ga⁺ FIB‐milled sections of organic and hybrid materials

Argon cluster cleaning of Ga⁺ FIB‐milled sections of organic and hybrid materials

Time‐of‐flight secondary ion tandem mass spectrometry depth profiling of organic light‐emitting diode devices for elucidating the degradation process

Characterization of polymeric surfaces and interfaces using time‐of‐flight secondary ion mass spectrometry

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Accurate and reproducible in-depth observation of organic–inorganic hybrid materials using FIB-TOF-SIMS

Cited by 12 publications

References 8 publications

Argon cluster cleaning of Ga+ FIB‐milled sections of organic and hybrid materials

Argon cluster cleaning of Ga+ FIB‐milled sections of organic and hybrid materials

Time‐of‐flight secondary ion tandem mass spectrometry depth profiling of organic light‐emitting diode devices for elucidating the degradation process

Characterization of polymeric surfaces and interfaces using time‐of‐flight secondary ion mass spectrometry

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Argon cluster cleaning of Ga⁺ FIB‐milled sections of organic and hybrid materials

Argon cluster cleaning of Ga⁺ FIB‐milled sections of organic and hybrid materials