Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation

Sasso, Grazia; Rinaldi, N.; Matz, Gregor; Jungemann, C.

doi:10.1109/sispad.2009.5290206

Cited by 15 publications

(8 citation statements)

References 13 publications

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“…In order to prevent negative Early-Voltages, an additional cost function was used, which artificially increases the relative error if a negative Early-Voltage is detected. For the considered HBTs, the set of parameters listed in Table VI is possible [15]. Although the parameters listed in Table VI revealed to be suitable for a variety of HBTs, our investigations show a correlation of the HD parameters with the structure under investigation.…”

Section: )mentioning

confidence: 84%

Hydrodynamic simulations for advanced SiGe HBTs

Wedel

Schröter

2010

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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The latest development of Silicon-Germanium (SiGe) HBTs has clearly demonstrated that the standard driftdiffusion model is not capable to predict the device performance. Thus more advanced simulation approaches are necessary such as simulators with hydrodynamic (HD) transport models. However, for realistic predictions, suitably calibrated models are required. In this paper, new accurate analytical models for the electron energy relaxation time and electron mobility are introduced that are suitable for implementation in HD TCAD simulators. These models are calibrated to simulation results obtained by the Boltzmann transport equation (BTE). Also a comparison with experimental data of an advanced SiGe HBT is given. I. INTRODUCTIONWith shrinking device dimensions and increasing operating frequencies, conventional simulation techniques such as the drift-diffusion (DD) model have started to loose their validity for predicting the electrical behavior of modern HBTs. For an improved description of carrier transport and the device performance, simulators solving the Boltzmann transport equation (BTE) or hydrodynamic (HD) models have been used. Concerning the accuracy, BTE solvers provide more physical insight into carrier transport because they offer a detailed description of band structure effects and scattering. The standard technique for solving the BTE is the MonteCarlo (MC) method, which is attractive due to the relatively small implementation effort. However, the major drawbacks of the MC method are the large simulation times and the noisy results especially for minority carriers.As a compromise HD models have been widely-used, which are derived by moment expansions and simplifications of the BTE. These models are very attractive concerning the simulation time but their accuracy w.r.t. the solution of the BTE strongly depends on the chosen HD formulation and material models, e.g. carrier mobilities. In order to retain the advantages of the HD approach, accurately calibrated HD models are inevitable.In section II of this paper the HD model will be shortly reviewed. In section III an adjustment strategy w.r.t. BTE results is introduced. In addition, a new electron energy relaxation time model and extensions of the Caughey-Thomas [1] mobility model for electrons is given. Section IV contains a comparison of HD simulation results with experimental data.

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Section: )mentioning

confidence: 84%

Hydrodynamic simulations for advanced SiGe HBTs

Wedel

Schröter

2010

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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“…The new proposed models have been implemented in a commercial tool [4]; however, implementation results are omitted here for briefness. The present work complements the results in [5], hence providing a complete analytical model set for realistic and predictive SiGe HBTs device simulation.…”

Section: Introductionmentioning

confidence: 54%

Analytical models of effective DOS, saturation velocity and high-field mobility for SiGe HBTs numerical simulation

Sasso

Rinaldi

Matz

et al. 2010

2010 International Conference on Simulation of Semiconductor Processes and Devices

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“…The 2-D domains corresponding to the DUTs (with W E = 0.13, 0.23, 0.27, 0.55 μm) were realized with the Structure Editor tool by tuning the doping and Ge profiles so as to match those measured by secondary ion mass spectrometry. Simulations were carried out by using a calibrated hydrodynamic (HD) model with transport parameters optimized for SiGe:C HBTs [33,34] to accurately capture non-local and non-quasi-static effects due to vertical scaling; all mechanisms playing a role were accounted for, including SRH recombination with high field enhancement and doping dependence [35]. A good agreement was obtained between the experimental and simulated Gummel plots (the latter under isothermal conditions at T 0 ) of the DUTs in the V BE ranges where SH is negligible.…”

Section: A Heat Sourcementioning

confidence: 99%

Advanced thermal simulation of SiGe:C HBTs including back-end-of-line

d’Alessandro

Magnani

Codecasa

et al. 2016

Microelectronics Reliability

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Advanced 3-D thermal simulations of state-of-the-art SiGe:C HBTs are performed, which ensure improved accuracy with respect to conventional approaches. The whole back-end-of-line architecture is modeled so as to account for the cooling effect due to the upward heat flow. Moreover, a nonuniform power density is considered to describe the heat source, and thermal conductivity degradation effects due to germanium, doping profile, and phonon scattering in narrow layers are implemented. The numerical thermal resistances are compared with those experimentally evaluated by means of a robust technique relying on the temperature dependence of the base-emitter voltage

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Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation

Abstract: Carrier mobility and energy relaxation time analytical models for hydrodynamic simulation of silicon-germanium hetero-junction bipolar transistors (HBTs) have been derived. In addition, some issues related to hydrodynamic simulation in commercial tools are discussed.

Cited by 15 publications

References 13 publications

Hydrodynamic simulations for advanced SiGe HBTs

Hydrodynamic simulations for advanced SiGe HBTs

Analytical models of effective DOS, saturation velocity and high-field mobility for SiGe HBTs numerical simulation

Advanced thermal simulation of SiGe:C HBTs including back-end-of-line

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