Accurate model of E‐plane waveguide junction with loaded rectangular coupling cavity

Abstract

An accurate model of a loaded E‐plane right‐angle bend in the rectangular waveguide is presented. The development is obtained with the use of the domain‐product technique, with the edge effects taken into account. The approach can be also applied to the T junction and the cross junction. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 34: 351–354, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10460

A GSM analysis of E‐plane waveguide junctions filled with piecewise homogeneous dielectric

“…Figure shows the N ‐dependences of Δ R = || R | − 0.994636| and Δ φ = | arg R − 0.135144|/ π . The numbers, taken here for comparisons, are the high‐accuracy values of the magnitude and the phase of R , obtained in by the direct use of the edge condition. It is seen that calculating errors rapidly decrease as N increases.…”

“…To supplement the tests of Tables , we examine the junction shown in Figure , whose full wave analysis has been presented in . The structure is cascaded into the first port interface, the rectangular coupling cavity, and the second port interface.…”

“…Electrodynamic properties of many similar H ‐plane structures were investigated in the past (see and its bibliography). At the same time, we have found the complete E ‐plane analysis of only one of discontinuities of this type given in . The method of generalized scattering matrices (GSMs) can provide certain advantages when dealing with this category of problems.…”

“…Here, the key configuration is a triangular region with attached wave channels, which enables cascading irregular geometries. Next, the efficiency and the validity of the approach are checked by numerical experiments and by the comparison of the computed results with the data available in . Finally, the approach is applied to the analysis of scattering by a slant interface between two dielectric media.…”