Accurate simulation on band-to-band tunneling induced leakage current using a global non-local model

Peng, J.Z.; Haddad, S.; Hsu, J.; Chen, Jian; Longcor, S.; Chang, Chih‐Yung

doi:10.1109/icsict.1995.499654

Cited by 5 publications

(1 citation statement)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In a non-uniform electric field, the electric field term in eq. (1) is determined non-locally along the tunnel path to properly estimate the tunneling rate [22]. Material parameters A and B depending on the carrier effective masses have been properly calculated for germanium [18,23].…”

Section: Device Architechtures and Physical Modelsmentioning

confidence: 99%

Effects of Source Doping Profile on Device Characteristics of Lateral and Vertical Tunnel Field-Effect Transistors

Chien¹

2015

Journal of Science and Technology

View full text Add to dashboard Cite

The source doping engineering, the low bandgap material and the vertical tunneling structure have recently been considered as most effective techniques to resolve the on-current issue in tunnel field-effect transistors (TFETs). In this paper, the effects of source doping profile, including the concentration and gradient, on the device characteristics are adequately elucidated in lateral and vertical TFETs using low bandgap germanium to allow a comprehensive comparison between the two major TFET architectures for the first time. Similar dependences of the on-current on the source concentration are observed in lateral and vertical TFETs, except that the on-current of vertical TFETs is always greater than that of lateral TFETs approximately one order of magnitude. With different contributions of the lateral and vertical tunneling components in the subthreshold region, the subthreshold swing of vertical TFETs first decreases at small concentrations, then increases at medium values, and finally decreases again at high concentrations, whereas that of lateral counterparts always decreases exponentially with increase in the source concentration. The on-current of lateral TFETs is significantly decreased, while that of vertical TFETs is almost invariable with increasing the source doping gradient. With competitive advantages of the vertical TFET architecture in on-current, subthreshold swing and device fabrication, vertical TFETs using low bandgap semiconductors are promising for use in low power applications.

show abstract

Section: Device Architechtures and Physical Modelsmentioning

confidence: 99%

Effects of Source Doping Profile on Device Characteristics of Lateral and Vertical Tunnel Field-Effect Transistors

Chien¹

2015

Journal of Science and Technology

View full text Add to dashboard Cite

show abstract

Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors

Chien

Shih

Hoa

et al. 2016

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

Flash EPROM endurance simulation using physics-based models

Peng

Haddad

et al.

Proceedings of 1994 IEEE International Electron Devices Meeting

View full text Add to dashboard Cite

A novcl unified ficld-dependent oxide charge generation (FDG) model is introduced to consistently simulate oxide degradation due to Fowler Nordheim (FN) tunneling and hot carrier injection (HCI) stresses over a wide range of oxide field intensity. This model, combined with an interface charge generation model, is used to study effects of stress-induced interface and oxide charges on flash device erase and programming speeds, hand-to-hand tunneling leakage current, and threshold voltage shift. An cfficient cycle-weighting method is introduced to simulate flash device programming/erase ( P E ) cycle endurance. Excellent agreement has been achieved between the simulation predications and experimental data over various operation conditions without parameter fittings or preassumed interface and oxide charge distributions. Simulation results show that the endurance characteristics are mainly affected by both the PE gate current reduction due to oxide charges and the flat-band voltage increase due to both oxide and interface charges.

show abstract

Accurate simulation on band-to-band tunneling induced leakage current using a global non-local model

Cited by 5 publications

References 1 publication

Effects of Source Doping Profile on Device Characteristics of Lateral and Vertical Tunnel Field-Effect Transistors

Effects of Source Doping Profile on Device Characteristics of Lateral and Vertical Tunnel Field-Effect Transistors

Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors

Flash EPROM endurance simulation using physics-based models

Contact Info

Product

Resources

About