Accurate Small-Signal Equivalent Circuit Modeling of Resonant Tunneling Diodes to 110 GHz

Morariu, Razvan; Wang, Jue; Cornescu, Andrei; Al-Khalidi, Abdullah; Ofiare, Afesomeh; Figueiredo, J. M. L.; Wasige, Edward

doi:10.1109/tmtt.2019.2939321

Cited by 14 publications

(7 citation statements)

References 26 publications

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“…which corresponds to the frequency at which the NDR is cancelled out by the equivalent circuit resistance. Here, C rtd and G rtd can be either extracted from S-parameters measurements [105] or theoretically estimated, where G rtd ≈ 3∆I/2∆V = 3A∆J/2∆V [94], with ∆J = ∆I/A the available current density. The resistance R s can be both extracted from measured S-parameters or estimated as R s ≈ R c = ρ c /A, where the specific contact resistivity ρ c is extracted from transfer length model (TLM) measurements [106].…”

Section: B Modellingmentioning

confidence: 99%

“…However, S-parameters characterisation of the RTD device remains nontrivial [107], especially at THz frequencies (> 100 GHz) due to parasitic bias oscillations [108] [109]. Accurate characterisation with reliable de-embedding for small-signal parameters extractions has been demonstrated up to 110 GHz [105]. A reliable non-linear model for the RTD device is yet to be developed to efficiently carry out oscillator large-signal [98] analysis, e.g., to estimate the output power at the oscillation frequency, or in the design of RTD-based coherent detectors [52], but work in this direction is underway [110]- [112].…”

Section: B Modellingmentioning

confidence: 99%

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Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

Cimbri

Wang

Al-Khalidi

et al. 2022

IEEE Trans. THz Sci. Technol.

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Resonant tunnelling diode (RTD) technology is emerging as one of the promising semiconductor-based solidstate technologies for terahertz (THz) wireless communications. This paper provides a review of the state-of-the-art, with a focus on the THz RTD oscillator, which is the key component of RTDbased THz transmitters and coherent receivers. A brief summary on the device principle of operation, technology, modelling, as well as an overview of oscillator design and implementation approaches for THz emitters, is provided. A new insight to device evaluation and to the reported oscillator performance levels is also given, together with brief remarks on RTD-based THz detectors. Thereafter, an overview of the reported wireless links which utilise an RTD in either transmission or reception, or in both roles, is given. Highlight results include the record single-channel wireless data rate of 56 Gb/s employing an all RTD-based transceiver, which demonstrates the potential of the technology for future short-range communications. The paper concludes with a discussion of the current technical challenges and possible strategies for future progress.

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Section: B Modellingmentioning

confidence: 99%

Section: B Modellingmentioning

confidence: 99%

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

Cimbri

Wang

Al-Khalidi

et al. 2022

IEEE Trans. THz Sci. Technol.

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“…The total self‐capacitance ( C S ) of the RTD can be expressed as

C_{normalS} = C_{0} + C_{normalw} = C_{0} - \frac{G_{normalD}}{v_{normalC}}

where C 0 is the geometric capacitance, C w is the quantum well capacitance, G D is differential conductance, and

v_{boldC}

is the electron escape rate from the quantum well to the collector. [ 14,15 ] In the double‐barrier quantum well structure, C 0 can be estimated by

C_{0} = \frac{A}{\frac{2 L_{normalw}}{ε_{normalw}} + \frac{L_{sw}}{ε_{sw}} + \frac{2 L_{normalB}}{ε_{normalB}} + \frac{L_{normalD}}{ε_{normalD}}}

where L w is the width of the quantum well (1.2 nm), L sw is the width of the subwell (1 nm), L B is the width of the barrier (1.2 nm), L D is the width of the depletion region (1.2 nm), and

ε_{normalw}

ε_{sw}

ε_{normalB}

, and

ε_{normalD}

are the corresponding material dielectric constants. [ 14–17 ]…”

Section: Resultsmentioning

confidence: 99%

“…[ 14,15 ] In the double‐barrier quantum well structure, C 0 can be estimated by

C_{0} = \frac{A}{\frac{2 L_{normalw}}{ε_{normalw}} + \frac{L_{sw}}{ε_{sw}} + \frac{2 L_{normalB}}{ε_{normalB}} + \frac{L_{normalD}}{ε_{normalD}}}

where L w is the width of the quantum well (1.2 nm), L sw is the width of the subwell (1 nm), L B is the width of the barrier (1.2 nm), L D is the width of the depletion region (1.2 nm), and

ε_{normalw}

ε_{sw}

ε_{normalB}

, and

ε_{normalD}

are the corresponding material dielectric constants. [ 14–17 ]…”

Section: Resultsmentioning

confidence: 99%

Characteristics of Series‐Connected Resonant Tunneling Diode‐Pair Configuration for High Output Power Operation

Lee

2021

Physica Status Solidi (a)

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Herein, a series‐connected resonant tunneling diode (RTD)‐pair configuration is characterized using the dynamic capacitance characteristics of the RTD. To achieve enhanced output power characteristics, the RTD‐pair cell is utilized in the RTD oscillator design to increase the voltage span and current span of the negative differential conductance (NDC) region. The results indicate that not only the output power can be significantly improved compared with the single‐RTD oscillator, but also it operates at a small capacitance region, making the RTD‐pair oscillator beneficial for high frequency and high output power operation.

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“…Notably, the total dissipated energy of our nanocircuit diode, E CV 2 , can be extremely low. As an example, for the case of a 2 μm 2 device resonant tunneling-based microLED device (assuming a 2.8 fF/μm 2 for QRT devices [75] and a 2 V operation), the estimated dissipated energy is ∼22 fJ. Lastly, we assume a 3-dB cutoff frequency, f 3dB , approximately set by the refractory time,…”

Section: Optical Spiking Dynamic Propertiesmentioning

confidence: 99%

NanoLEDs for energy-efficient and gigahertz-speed spike-based sub-λ neuromorphic nanophotonic computing

2020

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AbstractEvent-activated biological-inspired subwavelength (sub-λ) photonic neural networks are of key importance for future energy-efficient and high-bandwidth artificial intelligence systems. However, a miniaturized light-emitting nanosource for spike-based operation of interest for neuromorphic optical computing is still lacking. In this work, we propose and theoretically analyze a novel nanoscale nanophotonic neuron circuit. It is formed by a quantum resonant tunneling (QRT) nanostructure monolithic integrated into a sub-λ metal-cavity nanolight-emitting diode (nanoLED). The resulting optical nanosource displays a negative differential conductance which controls the all-or-nothing optical spiking response of the nanoLED. Here we demonstrate efficient activation of the spiking response via high-speed nonlinear electrical modulation of the nanoLED. A model that combines the dynamical equations of the circuit which considers the nonlinear voltage-controlled current characteristic, and rate equations that takes into account the Purcell enhancement of the spontaneous emission, is used to provide a theoretical framework to investigate the optical spiking dynamic properties of the neuromorphic nanoLED. We show inhibitory- and excitatory-like optical spikes at multi-gigahertz speeds can be achieved upon receiving exceptionally low (sub-10 mV) synaptic-like electrical activation signals, lower than biological voltages of 100 mV, and with remarkably low energy consumption, in the range of 10–100 fJ per emitted spike. Importantly, the energy per spike is roughly constant and almost independent of the incoming modulating frequency signal, which is markedly different from conventional current modulation schemes. This method of spike generation in neuromorphic nanoLED devices paves the way for sub-λ incoherent neural elements for fast and efficient asynchronous neural computation in photonic spiking neural networks.

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Accurate Small-Signal Equivalent Circuit Modeling of Resonant Tunneling Diodes to 110 GHz

Cited by 14 publications

References 26 publications

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

Characteristics of Series‐Connected Resonant Tunneling Diode‐Pair Configuration for High Output Power Operation

NanoLEDs for energy-efficient and gigahertz-speed spike-based sub-λ neuromorphic nanophotonic computing

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