Accurate transient calorimetric measurement of soft-switching losses of 10kV SiC MOSFETs

Rothmund, Daniel; Bortis, Dominik; Kolar, Johann W.

doi:10.1109/pedg.2016.7527030

Cited by 35 publications

(37 citation statements)

References 17 publications

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“…1(d load-independent and that the switching transition, shown in Fig. 1(e), features a limited speed [20]. Compared to dual active bridge converters presented in [4], [9], this reduced switching speed limits the CM currents, the EMI emission, and the excitation of transformer resonances.…”

Section: A Dc-dc Convertermentioning

confidence: 97%

Electrical shielding of MV/MF transformers subjected to high dv/dt PWM voltages

Guillod

Krismer

Kolar

2017

2017 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Abstract-The introduction of Medium-Voltage (MV) SiliconCarbide (SiC) devices enables the usage of higher power converter operating voltages, switching frequencies, and commutation speeds. This implies that Medium-Frequency (MF) and High-Frequency (HF) transients are applied to passive components, and particularly to inductors and transformers. Together with the operation at medium voltage, this leads to challenging situations with respect to Common-Mode (CM) currents, parasitic resonances, insulation coordination, and EMI. The electrical field is the key parameter for the aforementioned effects. Therefore, this paper analyzes the electric field distribution (in the insulation, at the surface, and in the air) for a ±3.5 kV/±400 V, 50 kHz, 25 kW MV/MF transformer employed in a Solid-State Transformer (SST) demonstrator. For reducing the field, a suitable shield is designed. It is found that the shield drastically reduces the field at the surface of the transformer and in the air without increasing the losses.

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Section: A Dc-dc Convertermentioning

confidence: 97%

Electrical shielding of MV/MF transformers subjected to high dv/dt PWM voltages

Guillod

Krismer

Kolar

2017

2017 IEEE Applied Power Electronics Conference and Exposition (APEC)

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“…A resonant inverter is employed with an inductive load in [9] and an LC load in [10]. In the former topology, the switch current has triangular shape whereas the same in the latter has sinusoidal shape.…”

Section: Electrical Loss Measurement In a Half-bridge Resonant Invertermentioning

confidence: 99%

“…There are several publications on the loss measurements with the hard switching of devices [5,6,7], but few on that with the soft switching [8,9,10]. Additionally, none of the publications have compared the losses between the electrical and calorimetric loss measurements where the main contribution of the paper lies.…”

Section: Introductionmentioning

confidence: 99%

Soft switching loss measurements of a 1.2 kV SiC MOSFET module by both electrical and calorimetric methods for high frequency applications

Tiwari

Langelid

Midtgård

et al. 2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

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This paper investigates the soft switching performance of a 1.2 kV half-bridge SiC MOSFET module, FCA150XB120 from Sanrex. The selected module has both MOSFET and diode integrated on a single chip. A single pulse control circuit is employed in a half-bridge series resonant inverter topology with a split dc-link and an LC load in order to emulate a real inverter operation. This results in a square wave output voltage and a sine wave output current where the switching is performed before the zero crossing of current (an inductive mode). In addition, a calorimetric loss measurement is carried out in a 78 kW full-bridge resonant inverter switching at about 200 kHz yielding an efficiency of 99 %. Moreover, this paper aims to find the highest possible switching frequency achievable with the selected module. Besides, the electrically measured loss is compared with the calorimetrically measured loss and the possible reasons for discrepancies are discussed.

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“…Some measurement solutions are given in [13], one of the methods to avoid impact on the operation of the converter is to use the calorimetric measurement method. The performance of GaN transistor by using a calorimetric method is measured in [14], [15]. The simple temperature measurement (Fig.…”

Section: Gan Transistors Drivers Driversmentioning

confidence: 99%

Design Considerations for Gan-Based Microinverter for Energy Storage Integration Into Ac Grid

Kroics

Zaķis

Suzdalenko

et al. 2017

Latvian Journal of Physics and Technical Sciences

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A full bridge converter with electrolytic capacitor on the dc bus is a widely used approach for a single phase interface for renewable energy source generation or energy storage integration in the utility grid. New wide bandgap devices enable higher switching frequency, higher efficiency and higher power density. In the paper, the authors introduce the challenges associated with an increase in switching frequency of a single phase inverter and implementation of wide bandgap GaN-based transistors instead of traditional Si-based transistors. The low gate threshold voltage of GaN transistor and unique reverse conduction behaviour require different driving circuit. The design of the driver circuit and other practical issues are analysed in the paper. The paper also presents some practical results. The research results can be useful to avoid mistakes by designing GaN-based power converters as these devices become increasingly interesting for commercial applications.

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Accurate transient calorimetric measurement of soft-switching losses of 10kV SiC MOSFETs

Cited by 35 publications

References 17 publications

Electrical shielding of MV/MF transformers subjected to high dv/dt PWM voltages

Electrical shielding of MV/MF transformers subjected to high dv/dt PWM voltages

Soft switching loss measurements of a 1.2 kV SiC MOSFET module by both electrical and calorimetric methods for high frequency applications

Design Considerations for Gan-Based Microinverter for Energy Storage Integration Into Ac Grid

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