2013
DOI: 10.1039/c3ce27090d
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Achieve high-quality GaN films on La0.3Sr1.7AlTaO6 (LSAT) substrates by low-temperature molecular beam epitaxy

Abstract: Achieve high-quality GaN films on La 0.3 Sr 1.7 AlTaO 6 (LSAT) substrates by low-temperature molecular beam epitaxy

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Cited by 28 publications
(42 citation statements)
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“…Lanthanum strontium aluminum tantalate, (LaAlO 3 ) 0.29 (SrAl 0.5 Ta 0.5 O 3 ) 0.7 (LSAT), was originally developed as a suitable substrate for growth of cuprate superconducting thin films [18]. Due to its high chemical and thermal stability and low electrical conductivity, it has quickly been adapted for growth of a wide range of thin film materials including strain-enabled ferroelectrics [25], and GaN-based LEDs and laser diodes [11,25]. The crystal structure of LSAT is cubic and belongs to space group Pm3m with a lattice parameter a=3.868 Å at room temperature.…”
Section: Lanthanum Strontium Aluminum Tantalatementioning
confidence: 99%
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“…Lanthanum strontium aluminum tantalate, (LaAlO 3 ) 0.29 (SrAl 0.5 Ta 0.5 O 3 ) 0.7 (LSAT), was originally developed as a suitable substrate for growth of cuprate superconducting thin films [18]. Due to its high chemical and thermal stability and low electrical conductivity, it has quickly been adapted for growth of a wide range of thin film materials including strain-enabled ferroelectrics [25], and GaN-based LEDs and laser diodes [11,25]. The crystal structure of LSAT is cubic and belongs to space group Pm3m with a lattice parameter a=3.868 Å at room temperature.…”
Section: Lanthanum Strontium Aluminum Tantalatementioning
confidence: 99%
“…In particular, there is a variety of perovskite metal oxides exhibiting such unique phenomena as colossal magnetoresistance [1,2], charge ordering [2], spin dependent transport [3], and formation of 2D electron gases [4] to name a few. In addition, perovskites are often mentioned as key materials in the advancement of photovoltaics [5,6], and are also incorporated in the development of applications in photonic devices [7,8], lasing media and LEDs [5,[9][10][11], fuel cell technology [12], memory devices [1,[13][14][15], catalytic chemistry, superconductivity [16][17][18], and much more.…”
Section: Introductionmentioning
confidence: 99%
“…In general, such small a-axis lengths of the FeSe 0.7 Te 0.3 films on bare CaF 2 substrates cannot be explained by the coherent epitaxial growth between the substrate and the film as the lattice parameter of CaF 2 is larger than the a-axis of FeSe 0.7 Te 0.3 . However, the coefficients of linear thermal expansion of the substrates are 18.9×10 −6 K −1 for CaF 2 25) , and 8.2×10 −6 K −1 for LSAT 26) , which are both higher than that of Fe(Se,Te) 27) , having the value of 4.2×10 −6 K −1 . Consequently, the larger shrinkage of the substrate in comparison to the film leads to a compressive strain 12,28,29) , during the cooling process after deposition resulting in a shorter a-axis length of the film.…”
mentioning
confidence: 94%
“…Due to the limitation of GIXR measurement, the thickness of tested films is required to be within 100 nm, 34 thin AlN films are used for this analysis. [35][36][37] As shown in Figure 6(a), the typical GIXR measurement curve for $40 nm-thick AlN film and its theoretical curve are fitted by LEPTOS software on the basis of the Fresnel equation, 38,39 using the thickness of AlN epitaxial layer as a parameter. The perfect fitting curves reveal that the AlN films are of $40 nmthick with no interfacial layer existing between AlN and Si.…”
Section: Resultsmentioning
confidence: 99%