Achieving atomistic control in materials processing by plasma–surface interactions

Chang, Jeffrey; Chang, Jane P.

doi:10.1088/1361-6463/aa71c7

Cited by 36 publications

(21 citation statements)

References 217 publications

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“…84) The ferroelectric and magnetic properties were respectively confirmed using piezo-response force microscopy (PFM) and superconducting quantum interference device (SQUID) magnetometry ties were demonstrated by thickness-related strain relaxation measurements. 85) Chang and coworkers have pointed out that multiferroic materials are capable of enabling energy-efficient designs for many devices, including memory, antennas, and motors. ALD and ALEt are processes enabling the integration of these materials.…”

Section: Atomic Layer Processing Of Multiferroic Materialsmentioning

confidence: 99%

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Ishikawa

Karahashi

Ichikı

et al. 2017

Jpn. J. Appl. Phys.

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In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The discussion encompasses major challenges shared across the plasma science and technology community. Focus is placed on advances in the development of fabrication technologies for emerging materials, especially metallic and intermetallic compounds and multiferroic, and two-dimensional (2D) materials, as well as state-of-the-art techniques used in nanoscale semiconductor manufacturing with a brief summary of future challenges.

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Section: Atomic Layer Processing Of Multiferroic Materialsmentioning

confidence: 99%

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Ishikawa

Karahashi

Ichikı

et al. 2017

Jpn. J. Appl. Phys.

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“…Chang and Chang [1] review the roles of plasma species involved in PSI, including synergistic effects in both plasma-enhanced atomic layer deposition (ALD) and atomic layer etching (ALE), and how these can lead to achieving control of composition and conformality in ALD, and materials selectivity and etch anisotropy in ALE.…”

Section: Plasma-surface Interactions Challengesmentioning

confidence: 99%

Editorial for achieving atomistic control in plasma–material interactions

Oehrlein

Hamaguchi

Keudell

2017

J. Phys. D: Appl. Phys.

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“…Atomic layer epitaxy (ALE) is one growth method that may help mitigate these problems: first, because the growth temperatures are much lower than for other thin-film methods such as molecular-beam epitaxy; and second, because separate, independent deposition steps are used for the group-III layer and the nitrogen layer. − Both of these aspects constrain the approach to thermodynamic equilibrium. Indeed, the growth of ternary III-nitrides by plasma-assisted ALE has already been demonstrated, including InGaN and InAlN films with indium content far exceeding the usual miscibility limit .…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Epitaxy of III-Nitrides: A Microscopic Model of Homoepitaxial Growth

Erwin

Lyons

2020

ACS Appl. Mater. Interfaces

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We develop a microscopic theoretical model of AlN, GaN, and InN film growth by atomic layer epitaxy. To make the model realistic, we take into account the atomic hydrogen that is created by the hydrogen plasma commonly used in plasma-assisted atomic layer epitaxy. This growth technique relies on separate deposition steps for nitrogen and the group-III cation. Our model addresses the processes that occur after a complete monolayer of nitrogen has formed, that is, the deposition, adsorption, surface diffusion, island nucleation, and island growth of group-III cations. According to our model, the three nitrides grow in a standard and qualitatively similar manner: during a brief nucleation phase, a modest attractive interaction leads to stable island nuclei consisting of just a few atoms. These then grow in place at a nearly constant island density and with an island size distribution which obeys an expected universal scaling relationship that depends only on the critical island size.

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Achieving atomistic control in materials processing by plasma–surface interactions

Cited by 36 publications

References 217 publications

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Editorial for achieving atomistic control in plasma–material interactions

Atomic Layer Epitaxy of III-Nitrides: A Microscopic Model of Homoepitaxial Growth

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