Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates

Abstract

Abstract:A detailed comparative theoretical analysis on both carrier and photon confinement of dilute nitride direct bandgap GaN x As 1−x−y P y with that of GaAs 1−y P y on Si substrates is presented. Model calculations indicate that optical confinement factor of GaAs 1−y P y /GaP is greater than that of GaN x As 1−x−y P y /GaP for all concentrations.We have demonstrated that one can improve the optical confinement factor of GaN x As 1−x−y P y /GaP by using an Al z Ga 1−z P cladding layer.