Achieving the Best Thermal Performance for GaN-on-Diamond

Pomeroy, James W.; Bernardoni, Mirko; Sarua, Andrei; Manoi, A.; Dumka, D.C.; Fanning, Dave; Kuball, Martin

doi:10.1109/csics.2013.6659210

Cited by 43 publications

(20 citation statements)

References 4 publications

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“…The use of Raman spectroscopy for temperature measurements was first demonstrated on Si devices [29], but has been more fully exploited following the advancement of GaN electronic devices [30], and has since been demonstrated extensively by several groups [31][32][33][34][35]. This technique is often combined with finite element (FE) thermal simulation to determine the channel temperature, as well as the measurement of material thermal properties used for device thermal simulations [36][37][38]. Figure 1 shows a comparison of temperatures measured in the same device using Raman thermography and IR thermography.…”

Section: Techniquesmentioning

confidence: 99%

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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This is the author accepted manuscript (AAM). The final published version (version of record) is available online via IEEE at http://ieeexplore.ieee.org/document/7590091. Please refer to any applicable terms of use of the publisher. University of Bristol -Explore Bristol Research General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: http://www.bristol.ac.uk/pure/about/ebr-termsAbstract-We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. This is critical for the qualification of device technology, including for accelerated lifetime reliability testing and device design optimization. Its practical use is illustrated for GaN and GaAs based high electron mobility transistors, and opto-electronic devices. We also discuss how Raman thermography is used to validate device thermal models, as well as determining the thermal conductivity of materials relevant for electronic and opto-electronic devices.

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Section: Techniquesmentioning

confidence: 99%

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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“…5,6 Moreover, channel temperature measurement aids the improvement of thermal design for low thermal resistance. 7,8 In this Letter, we report a Raman-based technique to directly access the temperature of the gate contact in AlGaN/GaN HEMTs, utilizing diamond microparticles capable of monitoring gate temperature on timescales as short as 10 ls.…”

mentioning

confidence: 99%

Diamond micro-Raman thermometers for accurate gate temperature measurements

Simon

Pomeroy

Kuball

2014

Applied Physics Letters

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“…The performance enhancement observed on the carbon-doped GaN HEMTs was attributed to a better thermal dissipation. To verify this statement, we assessed the channel temperature of these devices using Raman thermography [31]- [35]. These measurements were carried out on same dimensions 2×50 µm DHFET and HEMT GaN/SiC devices.…”

Section: Raman Thermography Measurementmentioning

confidence: 99%

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

Kabouche

Pecheux

Harrouche

et al. 2019

Int. J. Hi. Spe. Ele. Syst.

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In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drain current density ID of 1.5 A/mm associated to a high electron confinement and an extrinsic transconductance gm of 500 mS/mm, this structure shows excellent electrical characteristics. A maximum oscillation frequency fmax of 242 GHz has been observed. As a result, a state-of-the-art combination at 40 GHz of output power density (POUT = 7 W/mm) and power added efficiency (PAE) of 52% up to VDS = 25V has been obtained. The achievement of such outstanding performance is attributed to the reduced thermal resistance (RTH) as compared to the commonly used double heterostructure by means of Raman thermography.

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Achieving the Best Thermal Performance for GaN-on-Diamond

Cited by 43 publications

References 4 publications

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Diamond micro-Raman thermometers for accurate gate temperature measurements

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

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