Integration of chemical vapor deposited (CVD) polycrystalline diamond offers promising thermal performances for GaN-based high power radio frequency (RF) amplifiers. One limiting factor is the thermal barrier at the GaN to diamond interface, often referred to as the effective thermal boundary resistance (TBReff). Using a combination of transient thermoreflectance measurement, finite element modeling and microstructural analysis, the TBReff of GaN-on-diamond wafers is shown to be dominated by the SiNx interlayer for diamond growth seeding, with additional impacts from the diamond nucleation surface. By decreasing the SiNx layer thickness and minimizing the diamond nucleation region, TBReff can be significantly reduced, and a TBReff as low as 12 m 2 K/GW is demonstrated. This enables a major improvement in GaN-on-diamond transistor thermal resistance with respect to GaN-on-SiC wafers. A further reduction in TBReff towards the diffuse mismatch limit is also predicted, demonstrating the full potential of using diamond as the heat spreading substrate.

The effect of oxygen doping (n-type) and oxygen (O)-magnesium (Mg) co-doping (semi-insulating) on the thermal conductivity of ammonothermal bulk GaN was studied via 3-omega measurements and a modified Callaway model. Oxygen doping was shown to significantly reduce thermal conductivity, whereas O-Mg co-doped GaN exhibited a thermal conductivity close to that of undoped GaN. The latter was attributed to a decreased phonon scattering rate due the compensation of impurity-generated strain fields as a result of dopant-complex formation. The results have great implications for GaN electronic and optoelectronic device applications on bulk GaN substrates.

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General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: http://www.bristol.ac.uk/pure/about/ebr-terms The exceptionally high thermal conductivity of polycrystalline diamond (>20W/cmK) makes it a very attractive material for optimizing the thermal management of high-power devices. Herein, the thermal conductivity of a diamond sample capturing the grain size evolution from the nucleation towards the growth surface was studied by an optimized 3-omega technique. The