Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

Sun, Huarui; Pomeroy, James W.; Simon, Roland B.; Francis, Daniel; Faili, Firooz; Twitchen, Daniel J.; Kuball, Martin

doi:10.1109/led.2016.2537835

Cited by 63 publications

(30 citation statements)

References 23 publications

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“…Figure 15 also shows that TBR eff is temperature dependent, increasing with temperature due to the fact that the thermal conductivity of the AlN nucleation layer decreases with increasing temperature. We also note that the opposite can occur, for example, GaN-ondiamond contains an amorphous interlayer between the GaN and diamond, which increases in thermal conductivity with increasing temperature [83].…”

Section: B Characterization Of Materials Thermal Propertiesmentioning

confidence: 90%

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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This is the author accepted manuscript (AAM). The final published version (version of record) is available online via IEEE at http://ieeexplore.ieee.org/document/7590091. Please refer to any applicable terms of use of the publisher. University of Bristol -Explore Bristol Research General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: http://www.bristol.ac.uk/pure/about/ebr-termsAbstract-We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. This is critical for the qualification of device technology, including for accelerated lifetime reliability testing and device design optimization. Its practical use is illustrated for GaN and GaAs based high electron mobility transistors, and opto-electronic devices. We also discuss how Raman thermography is used to validate device thermal models, as well as determining the thermal conductivity of materials relevant for electronic and opto-electronic devices.

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Section: B Characterization Of Materials Thermal Propertiesmentioning

confidence: 90%

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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“…PCD heat spreaders can be integrated in different areas of an AlGaN/GaN HEMT, including (a) replacing the Si or SiC substrate by direct growth 10 or wafer bonding, 11 and (b) growing PCD directly on top of the passivated HEMT channel. 12,13 For the first strategy, both the electrical 10,14 and thermal device characterizations [15][16][17][18] have been studied extensively, with a potential threefold increase in output power density reported. 15,17 For the second strategy, improved electrical performance and 20% lower device temperature have been shown for PCD-capped and gateafter-PCD HEMT devices.…”

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Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

Zhou

Ramaneti

Anaya

et al. 2017

Applied Physics Letters

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112

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Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (κDia) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of κDia in the measured 25–225 °C range. Device simulation using the experimental κDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD.

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“…The application of diamond substrate can significantly reduce the temperature rise of device, which is expected to solve the performance degeneration under conditions of high bias and power drive. [8][9][10] Accurate device model, especially physical model, is essential for predicting device performance and guiding process development. This paper discusses the comparison result of performance between GaN HEMTs fabricated on SiC and diamond substrates based on the SP model.…”

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Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model

Zhou³

et al. 2017

ECS J. Solid State Sci. Technol.

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In this paper, the performance difference of AlGaN/GaN high-electron mobility transistors (HEMTs) with same epitaxial structure fabricated silicon carbide (SiC) and transferred to diamond substrate is examined based on the surface-potential (SP) model. The thermal resistances of these devices are extracted through finite element method (FEM) thermal analysis. Results show that GaN-ondiamond device has a lower thermal resistance than conventional GaN-on-SiC device, which demonstrates the thermal performance improvement of GaN-on-Diamond technology. By embedding thermal characteristic into carrier mobility in the conventional SP model, the effectiveness of model is validated through good agreement between simulation and measurements of DC and RF performance. Additionally, large-signal performance (output power P out , power added efficiency P AE and Gain) on these two similar devices are compared under identical bias and temperature conditions based on the improved SP model, making this work be effective for improving the process of GaN-on-Diamond HEMTs. The excellent performance of GaN materials including wide bandgap, high thermal conductivity, high electron saturation drift velocity makes it very suitable for the development of highfrequency, high-power microwave and millimeter-wave device and circuit applications.1,2 SiC material is presently a major choice to implement high-performance GaN HEMT due to its high thermal conductivity that is an order of magnitude greater than that of other materials such as sapphire. However, the heat dissipation issue appears more and more prominent with the development to direction of smaller size, greater output power and higher frequency. Therefore, to solve the degradation of device performance and reliability caused by heat dissipation, it is of utmost importance to reduce thermal resistance to get good thermal management. [3][4][5] Recently, GaN HEMT devices fabricated on diamond substrate (GaN-on-diamond) have been developed 6,7 due to its high thermal conductivity (2000 W/m · K) that is three to four times that of SiC. The application of diamond substrate can significantly reduce the temperature rise of device, which is expected to solve the performance degeneration under conditions of high bias and power drive. [8][9][10] Accurate device model, especially physical model, is essential for predicting device performance and guiding process development. This paper discusses the comparison result of performance between GaN HEMTs fabricated on SiC and diamond substrates based on the SP model. The paper is organized as follows. In Device structure and fabrication section, the structure and fabrication process of GaN-onDiamond HEMTs are described in detail. Then the 3D FEM model and SP model are described briefly in Thermal analysis setup and results section and SP model description for following performance verification and discussion in RF Performance verification section. Finally, Conclusion section is the conclusion. Device Structure and FabricationThe cross-section view o...

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Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

Cited by 63 publications

References 23 publications

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model

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