Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

Zhou, Yan; Ramaneti, R.; Anaya, J.; Korneychuk, Svetlana; Derluyn, Joff; Sun, Huarui; Pomeroy, James W.; Verbeeck, Johan; Haenen, Ken; Kuball, Martin

doi:10.1063/1.4995407

Cited by 112 publications

(64 citation statements)

References 47 publications

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“…However, its low thermal conductivity of only 2 W/cm•K at room temperature limits the use of GaN devices in high-performance regimes [12]. Thus, a great prospect to combine GaN devices with diamond thermal management layers may be achieved by the means of layer bonding or the direct growth of diamond layers on GaN heterostructures [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Effect of Substrate Holder Design on Stress and Uniformity of Large-Area Polycrystalline Diamond Films Grown by Microwave Plasma-Assisted CVD

et al. 2020

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In this work, the substrate holders of three principal geometries (flat, pocket, and pedestal) were designed based on E-field simulations. They were fabricated and then tested in microwave plasma-assisted chemical vapor deposition process with the purpose of the homogeneous growth of 100-μm-thick, low-stress polycrystalline diamond film over 2-inch Si substrates with a thickness of 0.35 mm. The effectiveness of each holder design was estimated by the criteria of the PCD film quality, its homogeneity, stress, and the curvature of the resulting “diamond-on-Si” plates. The structure and phase composition of the synthesized samples were studied with scanning electron microscopy and Raman spectroscopy, the curvature was measured using white light interferometry, and the thermal conductivity was measured using the laser flash technique. The proposed pedestal design of the substrate holder could reduce the stress of the thick PCD film down to 1.1–1.4 GPa, which resulted in an extremely low value of displacement for the resulting “diamond-on-Si” plate of Δh = 50 μm. The obtained results may be used for the improvement of already existing, and the design of the novel-type, MPCVD reactors aimed at the growth of large-area thick homogeneous PCD layers and plates for electronic applications.

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Section: Introductionmentioning

confidence: 99%

Effect of Substrate Holder Design on Stress and Uniformity of Large-Area Polycrystalline Diamond Films Grown by Microwave Plasma-Assisted CVD

et al. 2020

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“…12 [73]. Zhou et al demonstrated that polycrystalline diamond can be effectively used as the heat spreader on AlGaN/GaN HEMTs [74]. Lin et al demonstrated that an electrically insulating 2D BN nanosheet to be used for efficient heat dissipation on high-power transistors [75].…”

Section: Thermal Management Solutions For Power Electronicsmentioning

confidence: 99%

Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications

Lundh

Shervin

et al. 2019

Journal of Electronic Packaging

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GaN-based high-power wide-bandgap semiconductor electronics and photonics have been considered as promising candidates to replace conventional devices for automotive applications due to high energy conversion efficiency, ruggedness, and superior transient performance. However, performance and reliability are detrimentally impacted by significant heat generation in the device active area. Therefore, thermal management plays a critical role in the development of GaN-based high-power electronic and photonic devices. This paper presents a comprehensive review of the thermal management strategies for GaN-based lateral power/RF transistors and light-emitting diodes (LEDs) reported by researchers in both industry and academia. The review is divided into three parts: (1) a survey of thermal metrology techniques, including infrared thermography, Raman thermometry, and thermoreflectance thermal imaging, that have been applied to study GaN electronics and photonics; (2) practical thermal management solutions for GaN power electronics; and (3) packaging techniques and cooling systems for GaN LEDs used in automotive lighting applications.

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“…Several studies have shown reduced operating temperatures of GaN devices when using integrated diamond heat spreading technology [7,8,9].…”

Section: Introductionmentioning

confidence: 99%

Thermal stress modelling of diamond on GaN/III-Nitride membranes

Cuenca

Smith

Field

et al. 2021

Carbon

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Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III-N) heterostructure membrane induces significant thermal stresses. In this work, these thermal stresses are investigated using an analytical approach, a numerical model and experimental validation. The thermal stresses are

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Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

Cited by 112 publications

References 47 publications

Effect of Substrate Holder Design on Stress and Uniformity of Large-Area Polycrystalline Diamond Films Grown by Microwave Plasma-Assisted CVD

Effect of Substrate Holder Design on Stress and Uniformity of Large-Area Polycrystalline Diamond Films Grown by Microwave Plasma-Assisted CVD

Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications

Thermal stress modelling of diamond on GaN/III-Nitride membranes

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