Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers

Pomeroy, James W.; Simon, Roland B.; Sun, Huarui; Francis, Daniel; Faili, Firooz; Twitchen, Daniel J.; Kuball, Martin

doi:10.1109/led.2014.2350075

Cited by 48 publications

(31 citation statements)

References 10 publications

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“…The transient thermoreflectance technique was described in detail in [7,8]: A 10 ns-pulsed 355 nm laser was used to heat the surface of the Au film, inducing a rapid temperature increase. A continuous 532 nm laser was then used to monitor the transient change in the reflectivity of the Au film which is proportional to the temperature rise.…”

Section: Samples and Measurementmentioning

confidence: 99%

Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

Sun

Pomeroy

Simon

et al. 2016

IEEE Electron Device Lett.

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Section: Samples and Measurementmentioning

confidence: 99%

Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

Sun

Pomeroy

Simon

et al. 2016

IEEE Electron Device Lett.

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“…Further details on this technique are published elsewhere. 9,14 To test the mechanical stability of the GaN/diamond interface, different sizes of micro-pillars were created; a typical pillar is shown in Fig. 1(b).…”

Section: (A)mentioning

confidence: 99%

GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

Liu

Sun

Pomeroy

et al. 2015

Applied Physics Letters

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The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.

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“…Chemical vapor deposited (CVD) polycrystalline diamond has the highest thermal conductivity reaching up to 2000 W m −1 K −1 , which can greatly improve the thermal management of a GaN device . The GaN‐on‐diamond shows an increase in three times the power density and lower junction temperatures than those on a GaN‐on‐SiC device …”

Section: Introductionmentioning

confidence: 99%

“…4 The GaN-on-diamond shows an increase in three times the power density and lower junction temperatures than those on a GaN-on-SiC device. [5][6][7][8][9][10] However, for a GaN-on-diamond device, the heat spreading capability is dependent on not only the diamond thermal conductivity but also the significant effective thermal boundary resistance (TBR) of the GaN/diamond interface. TBR is a lump resistance, including contributions to a dielectric layer and the high-grain-boundary-density diamond near to the interface.…”

Section: Introductionmentioning

confidence: 99%

The influence of dielectric layer on the thermal boundary resistance of GaN‐on‐diamond substrate

Xin

Wei

Kong³

et al. 2019

Surface & Interface Analysis

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The cooling behavior of GaN‐on‐diamond substrate can be enhanced by reducing the thermal boundary resistance (TBR), which is mainly determined by the nature of interlayer. Although SiN film is considered as the primary candidate of dielectric layer, it is still needed to be optimized. In order to facilitate the understanding of the influence of dielectric layer on the TBR of GaN‐on‐Diamond substrate, aluminum nitride (AlN), and silicon nitride (SiN) film were compared systematically, both of which are 100 nm. The time‐domain thermoreflectance (TDTR) measurements, adhesion evaluation, and microstructural analysis methods were adopted to analyse these two interlayers. The results show the TBR of SiN interlayer is as low as 38.5 ± 2.4 m2K GW−1, comparing with the value of 56.4 ± 5.5 m2K GW−1 for AlN interlayer. The difference of TBR between these two interlayers is elucidated by the diamond nucleation density, and the adhesion between the diamond film and GaN substrate, both of which are affected by the surface charge and chemical groups of the dielectric layer.

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Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers

Cited by 48 publications

References 10 publications

Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

The influence of dielectric layer on the thermal boundary resistance of GaN‐on‐diamond substrate

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