Achieving very high drain current of 1.23 mA/μm in a 1-μm-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET

Lin, Tsung-Hsien; Chang, P.; Wu, Yung-Hsien; Chiu, H. C.; Kwo, J.; Hong, M.

doi:10.1016/j.jcrysgro.2010.12.079

Cited by 3 publications

(2 citation statements)

References 25 publications

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“…Therefore, Pd/Ge has already been applied to various GaAs-based device fabrications. [12][13][14][15] However, because of the solubility limit of Si dopants in GaAs, 16 the lowest specific contact resistivity achieved by Pd/Ge contact is on the order of $10 À6 X cm 2 (Refs. 4, 7 and 17-19), far from the required 1 Â 10 À8 X cm 2 for III-V device to attain $1.5 THz in f t and f max , 20 where f t is the cutoff frequency and f max is the maximum oscillation frequency.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device

Chang

Chiang

Lin

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Section: Introductionmentioning

confidence: 99%

Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device

Chang

Chiang

Lin

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…To our knowledge, the present maximum drain current (I d,max ) in InGaAs MOSFETs with a channel length (L ch ) of 1 m is 1.23 mA/m at drain voltage V d ¼ 2:5 V; this uses an In 0:75 Ga 0:25 As channel and molecular-beam-epitaxy-deposited Al 2 O 3 /Ga 2 O 3 (Gd 2 O 3 ) dielectrics. 2) Recently, the high performance of InGaAs MOSFETs with a high-k dielectric fabricated by atomic layer deposition (ALD) has been demonstrated. [3][4][5][6] ALDdeposited Al 2 O 3 /In 0:7 Ga 0:3 As MOSFETs with L ch ¼ 0:4 m have achieved I d,max ¼ 1:05 mA/m at V d ¼ 2 V. 3) On the other hand, the required source doping concentration of InGaAs MOSFETs is around 10 20 cm À3 for high injection current without source starvation.…”

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confidence: 99%

InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al₂O₃Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/µm

Terao

Kanazawa

Ikeda

et al. 2011

Appl. Phys. Express

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We have realized InP/InGaAs composite-channel metal–oxide–semiconductor field-effect transistors with both selectively regrown n+-InGaAs source/drain regions and Al2O3 as a gate dielectric. A 100-nm-long channel was fabricated by laterally buried regrowth in a channel undercut by metalorganic vapor phase epitaxy. The carrier density of the regrown layer was 2.9×1019 cm-3. A drain current Id of 1.34 mA/µm was achieved at a drain voltage Vd of 1 V and a gate voltage Vg of 3 V. A transconductance gm of 817 µS/µm at Vd = 0.65 V was also observed at the same time. The improvement in the subthreshold slope can be explained by the decrease in dielectric/semiconductor interface trap density.

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Semiconductor‐insulator Interfaces, High κ Dielectrics on (In)GaAs

Lin

Chang

et al. 2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Recent development of high κ dielectric oxides on (In) GaAs is reviewed in the fields of electronic structure and electric performance; this includes studies of (In) GaAs surfaces with various surface reconstructions, different orientations, and Indium contents, and of high κ/(In) GaAs interfaces. The oxide deposition was carried out using atomic‐layer deposition ( ALD ) and molecular beam epitaxy ( MBE ) via ex‐situ or in‐situ methods. For the former approach, the semiconductor surfaces prior to the oxide deposition were obtained via chemical, arsenic‐cap or annealing treatments. For the latter, the high k's were deposited on pristine freshly MBE ‐grown (In) GaAs surfaces without any treatments. Surface being treated or not clearly determines the quality of the oxide interface which delivers different interfacial electronic structure and electric performance. Without exception, the ex‐situ treated samples show remnant native oxides, which are never found in the in‐situ samples. The electronic structure has been investigated using photoemission measurements, in which the photon energy was provided by X ‐ray and synchrotron radiation. The discussion on high κ/(In) GaAs interfaces has been further extended to the electrical characterization including extraction of interfacial trap densities ( D it 's). Especially, the distinct electrical characteristics of the In 0.2 Ga 0.8 As metal‐oxide‐semiconductor capacitors ( MOSCAPs ) using MBE ‐ Ga 2 O 3 ( Gd 2 O 3 ) and ALD ‐ Al 2 O 3 as the gate are elucidated. Finally, a summary and bench‐marking of the recent advances on enhancement mode III ‐ V (In) GaAs MOSFETs is given, which reveals the great potential of inversion‐channel (In) GaAs MOSFETs for ultimate complementary MOS ( CMOS ) applications.

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Achieving very high drain current of 1.23 mA/μm in a 1-μm-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET

Cited by 3 publications

References 25 publications

Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device

Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device

InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al₂O₃Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/µm

Semiconductor‐insulator Interfaces, High κ Dielectrics on (In)GaAs

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Achieving very high drain current of 1.23 mA/μm in a 1-μm-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET

Cited by 3 publications

References 25 publications

Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device

Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device

InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al2O3Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/µm

Semiconductor‐insulator Interfaces, High κ Dielectrics on (In)GaAs

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InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al₂O₃Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/µm