Achieving wavelength emission beyond the C-band from Type-II InAs-GaAsSb quantum dots grown monolithically on silicon substrate

Effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on GaAs and Si substrates by molecular beam epitaxy

“…Within the field of QD systems, the area of InAs QDs has attracted much research activity, which is due to the possibility of achieving light emission covering the optical communication wavelength bands. [1][2][3] The study of the electrical properties of any semiconductor material is important in order to understand the possibility of using them in different electronic and optoelectronic applications. Electrical properties of PN junctions and Schottky diodes are affected by a multitude of factors.…”

Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy

“…Considerable efforts have been made to investigate the optical properties of selfassembled quantum dots (QDs) due to their wide range of applications in optoelectronics such as lasers, photodetectors, amplifiers, and solar cells [1][2][3]. Among the QDs systems, InAs QDs attracted an intensive research activity motivated by the possibility to achieve light emission covering the optical communication wavelength bands [4][5][6]. Many strategies have been used for the extension of the wavelength including growing larger QDs [7] and InGaAs metamorphic buffers (MB) which behave as virtual substrates where the lattice parameter can be controlled by an adroit design of the composition profile of the MB, keeping them separated from the active region of the device [8][9][10][11][12].…”

“…Many strategies have been used for the extension of the wavelength including growing larger QDs [7] and InGaAs metamorphic buffers (MB) which behave as virtual substrates where the lattice parameter can be controlled by an adroit design of the composition profile of the MB, keeping them separated from the active region of the device [8][9][10][11][12]. Another adopted strategy is the strain reducing layer (SRL) [6,13]. The SRL preserves the size of QDs during capping by reducing the indium dissolution [14].…”

“…The SRL preserves the size of QDs during capping by reducing the indium dissolution [14]. In spite of photoluminescence (PL) emissions closer to 1.3 μm have been achieved [6,[7][8][9][10][11][12][13], the larger lattice-mismatch strain between GaAs and InAs (~7%) had resulted in inhomogeneous dot size distribution and smaller dot density which limiting the device performance. It was found that the best way to preserve InAs QD size is the use of SRL [15][16][17].…”

Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers

“…To alleviate this issue, strain-reducing layers made of (Ga, In)(As, Sb, N) have been used [2–7]. In particular, the ternary GaAsSb has received particular attention as its resulting band alignment can be tailored to be of type I or type II by changing the Sb content [8, 9] and by its capability in extending the emission wavelength beyond the C-band [10]. However, the difference in energy between the fundamental and excited state is limited to 60–75 meV when GaAsSb is used as a strain-reducing layer (SRL) [11].…”