Acid photogeneration from sulfonium salts in solid polymer matrices

A new simple method was developed to estimate the diffusion range of photogenerated acid in chemical amplification resist systems. The acid mobility was investigated for various process conditions. It was found that prebake and post-exposure-bake conditions have strong influence on the mobility of acid. The diffusion range of acid is much larger than values estimated from the catalytic volume. No acid diffusion could be detected at room temperature over a period of 2 days. Acid from an opium salt acid generator showed a stronger diffusion than acid from a methanesulfonic acid ester.

Section: Introductionmentioning

confidence: 99%

Diffusion of photogenerated acid in chemical amplification positive deep UV resists.

Schlegel

Ueno

Hayashi

et al. 1991

“…[10][11][12] The amount of TsOH generated by the photolysis of P(TsOMI/St) in film was determined by a colorimetry utilizing a merocyanine dye. [8,13] The photochemical conversion of TsOMI copolymer proceeded over 30 mol% based on TsOMI moieties depending on the irradiation time as reported previously. [8] The photochemical generation of the organic acids was greatly enhanced upon combining 5 to 10 % of hydroquinone (HQ) as an additive.…”

Section: Deprotection Of T-boc Groups By Toluenesulfonic Acids Generamentioning

confidence: 56%

Terpolymers of tosyloxymaleimide for application as a polymeric photoacid generator in single-component resists.

Chung

Koo

Ahn³

1994

Terpolymers of sulfonyloxymaleimides have been prepared as a new class of polymeric photoacid generator and their photochemical and thermal properties were investigated. The styrenic copolymers of N-tosyloxymaleimide (TsOMI) produced p-toluenesulfonic acid (TsOH) in solid state by deep UV irradiation and the amount of generated acid was determined by using a colorimetric method. Two terpolymers of TsOMI and p-(t-butyloxycarbonyloxy)styrene showed the capability of a single-component, chemically amplified resist system in deep UV region. Positive-and negative-tone images were obtained with sensitivity of 50 mJ/cm2.

“…The reaction sequence for these systems consists of three steps; photogeneration of acid, catalytic thermolysis, and Silylation. The first step, photogeneration of acid in a polymeric film, has been studied earlier (20). The combination of the first two steps (photogeneration of acid, followed by acid catalyzed thermolysis) is the foundation of chemically amplified resist systems as described in 1982 by I to, Frechet, and Willson (21)(22)(23)(24).…”

Section: Resultsmentioning

confidence: 99%

Plasma developable photoresist systems based on chemical amplification.

Macdonald

Schlosser

Itô

et al. 1991

Ito, This paper reports work on two chemically amplified resist systems that can be developed in an oxygen plasma environment. These systems are based on the catalytic photogeneration of functional groups within the resist film which react, in a subsequent step, with a silylating agent that is delivered in the gas phase. As a result, the organosilicon species is selectively and covalently incorporated into the exposed regions of the resist film. When the silylated film is exposed to an oxygen plasma, the regions that do not contain the organosilicon species are etched to substrate, while those areas containing silicon are not etched. This generates a negative tone relief image. The chemical mechanisms and lithographic properties of these systems will he discussed.