Acoustic emission and precision force-displacement observations of spherical indentations into TiN films on silicon

Shiwa, Mitsuharu; Weppelmann, E.R.; Bendeli, A.; Swain, Michael V.; Münz, D.; Kishi, Toshiharu

doi:10.1016/0257-8972(94)90223-2

Cited by 22 publications

(14 citation statements)

References 6 publications

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“…Unlike the AE monitoring of bulk ceramics and metals, the cracking mechanism in overlay coatings is dependent on the adhesive nature as well as microstructures of thin layer and substrate. AE response during indentation of thin films has indicated that it is dominated by the 'high intensity AE peaks' due to a number of failure modes such as film cracking 96,110,[141][142][143][144][145][146][147][148][149][150][151] and delamination 98,110,143,149,[152][153][154] with some evidence of AE associated with plastic deformation. 141,147 Research has focused on thin films deposited using techniques such as physical vapour deposition (PVD), 110,141,144,151 chemical vapour deposition (CVD), 143,145,147 microwave plasma chemical vapour deposition (MPCVD) 149,150,153,154 or plasma assisted chemical vapour deposition (PACVD), 142 and other process such as sputtering 152 or pulsed laser deposition.…”

Section: Ae Monitoring Of Thin Solid Filmsmentioning

confidence: 99%

Indentation testing and its acoustic emission response: applications and emerging trends

Faisal

Ahmed

Reuben

2011

International Materials Reviews

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This review summarises the state of knowledge on acoustic emission (AE) techniques applied to material property evaluation during indentation (e.g. hardness) testing. There are two aspects of application of AE technique to indentation which makes it unique, i.e. (1) enhancing the understanding of the evolution of material accommodation mechanisms under loading and (2) qualitative and quantitative evaluation of mechanical properties such as fracture toughness and bond strength from the AE signal. Both of these aspects have the potential to improve our understanding of the structure property relationships of current and future generation materials. In addition, the knowledge developed here can be incorporated to improve the AE based condition monitoring systems for stress critical applications. This review concentrates on the phenomena which occur during indentation and how its examination can be used to study more fundamental behaviour of materials such as deformation and fracture. The uncertainty in quantifying and measuring the total crack surface in indentation makes a simple fracture mechanics based assessment of toughness difficult. It is therefore expected that correlation between AE and fracture patterns will lead to an improved method for material's quality evaluation. The main part of this review is presented on AE of material classifications. These classifications include ceramics, glasses, composites, metals and metallic foams, thin solid films and thermally sprayed coatings. Apart from quasi-static indentation testing, attention has also been paid to studies on various AE instrumented indentation systems so that information can be derived about the progress of deformation and cracking processes. This review discusses the studies summarising those aspects that have so far been established and the areas of controversy and/or lack of knowledge. The prospect of using AE techniques to monitor indentation tests is also assessed, taking into account those few studies that have been reported so far in different groups of materials. Although with some limitations, it is concluded that AE monitored indentation testing has considerable scope to assess in much more detail the deformation and cracking properties of materials under localised stress condition. It is possible to construct empirical relationships and develop theoretical understanding linking mechanical parameters with AE signal characteristics and its derived features. However, the occurrence of multiple events at different locations superimposing the AE signal requires more advanced signal processing techniques. With the advancement of very thin films and nanomaterials, it is anticipated that AE response measured during nanoindentation will be critical for enhancing our understanding of future generation applications, as it allows individual events to be investigated without resorting to more complex signal processing techniques. In terms of material accommodation, the understanding of physical mechanisms generating AE require a multiscale approach, e...

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Section: Ae Monitoring Of Thin Solid Filmsmentioning

confidence: 99%

Indentation testing and its acoustic emission response: applications and emerging trends

Faisal

Ahmed

Reuben

2011

International Materials Reviews

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“…Under such conditions, the monitoring of micro-or nanoindentationinduced fracture has been carried out for bulk materials, 14,15 thin films, 16,17 and interfaces. This suggests that special types of AE sensors would be needed for monitoring ultralow-load indentation contacts.…”

Section: Introductionmentioning

confidence: 99%

Highly localized acoustic emission monitoring of nanoscale indentation contacts

et al. 2003

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This study evaluated a novel approach for acoustic emission (AE) monitoring of nanoindentation. The technique utilizes a miniature AE sensor integrated into a calibrated diamond indenter tip on a commercial nanoindentation system. The evaluation focused on the yield-point phenomenon in W (100); MgO (100); and sapphire C (0001); R (1012); A (1210); and M (1010) single-crystal surfaces. The minimum amount of elastic energy release sufficient to produce AE signal detectable with the indenter tip sensor was nearly two orders of magnitude lower than the minimum energy level required for conventional AE sensors. Wave forms detected with the indenter tip sensor were independent of sample size. A linear relationship between released elastic energies and the corresponding AE energies was observed for all three evaluated materials. The scaling coefficient of the linear relationship was independent of indenter tip size/shape and indentation depth. The differences between the mechanisms of the initial stages of plasticity for the various crystallographic orientations of sapphire were reflected in the following aspects of AE activity: detection of a specific type of AE wave form that correlated to the presence of linear surface features near the indentation sites; AE signal associated with the yield point, consisting either of one or two distinct wave forms; and presence or absence of AE signals after the yield point. The possibility of plasticity onset in sapphire involving both slip and twinning is discussed.

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“…8͑a͔͒, which appears in the unloading cycle of the indentation hysteresis loops recorded for virgin HfN films, and is caused by the stress-induced phase transformation in silicon substrate, 43 does not show up for ion-bombarded layers. The above indicates that our nanoindentation results were still affected by the deformation of the silicon substrate directly under the top layer ͑similarly to the TiN/Si system reported by Shiwa et al 44 and elaborated on HfN/Si by Nowak et al 35 ͒. The lack of the singularities for ion-bombarded films suggests that the crystalline structure of silicon substrate has changed after the applied treatment ͓Fig.…”

Section: Nanoindentation and Electrical Resistivity Of Hfn Films Mmentioning

confidence: 67%

Postdeposition relaxation of internal stress in sputter-grown thin films caused by ion bombardment

Nowak

Yoshida

Morgiel

et al. 1999

Journal of Applied Physics

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Influence of oxygen diffusion on residual stress for tantalum thin films J. Vac. Sci. Technol. B 25, 147 (2007); 10.1116/1.2431179 X-ray diffraction study of stress relaxation in cubic boron nitride films grown with simultaneous medium-energy ion bombardment Appl. Phys. Lett. 85, 5905 (2004); 10.1063/1.1836868Influence of energetic bombardment on stress, resistivity, and microstructure of indium tin oxide films grown by radio frequency magnetron sputtering on flexible polyester substrates A hitherto unreported postdeposition method of relaxing ultrahigh internal stresses prevailing in sputter-grown thin films is the subject of the present research. A significant reduction of stress has been confirmed by x-ray diffraction and independent substrate deflection measurements for HfN films treated with Si ϩ ions of various energies ͑450 keV, 500 keV, and 1.1 MeV͒. The particular sequence of the performed experiments has allowed us to deduce the most likely scenario of the resulting stress relaxation. We argue that the observed reduction of internal stress had been caused by structural changes, namely the transport of interstitial defects occurring within the thermal spikes induced by ion bombardment and an increase in vacancy concentration. Simple theoretical considerations proved that the existence of an amorphous silicon interlayer formed right under the HfN film during the bombardment cannot be the cause of the observed stress relaxation. The employed Auger electron spectroscopy, transmission electron microscopy, and x-ray diffraction technique confirmed that the ion bombardment did not seriously affect either the composition, dislocation structure, or texture of nitride films. The relative softening of HfN after ion bombardment was found to be caused by amorphization of the substrate directly under the film. The penetration of incident particles deeper than predicted by a numerical simulation was attributed to a distinct crystallographic texture determined experimentally for HfN films. It was confirmed that modification with Si ϩ ions does not affect the resistivity of HfN films.

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Acoustic emission and precision force-displacement observations of spherical indentations into TiN films on silicon

Cited by 22 publications

References 6 publications

Indentation testing and its acoustic emission response: applications and emerging trends

Indentation testing and its acoustic emission response: applications and emerging trends

Highly localized acoustic emission monitoring of nanoscale indentation contacts

Postdeposition relaxation of internal stress in sputter-grown thin films caused by ion bombardment

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