2018
DOI: 10.2478/ntpe-2018-0095
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Acoustic Emission of Monolithic IGBT Transistors

Abstract: Due to the increasing number of applications of power semiconductor devices, more and more attention is being paid to diagnostic methods to determine the condition of working semiconductor components. On the basis of the results of experimental research, a correlation can be observed between the transition between the on/off states of a single IGBT transistor in operation and the acoustic signal emitted by it. Acquisition of acoustic emission signals was obtained using a specialized sensor from Vallen. To reco… Show more

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Cited by 10 publications
(4 citation statements)
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“…From Ref. [402], see also [404]. mass) twins, just by slightly varying the unknown screening parameter to be α = 0.3.…”
Section: Low-mass Twin Stars: Gw170817 and Nicermentioning
confidence: 99%
“…From Ref. [402], see also [404]. mass) twins, just by slightly varying the unknown screening parameter to be α = 0.3.…”
Section: Low-mass Twin Stars: Gw170817 and Nicermentioning
confidence: 99%
“…An AE measuring sensor of the developed diagnostic system is placed in way of the injection pump head as shown in Figure 4. The signal is then transmitted to the dedicated recorder of AE elastic waves [7][8][9]. The AE signal from an injection pump is recorded while the engine is working.…”
Section: Methodsmentioning
confidence: 99%
“…The IGBT transistor combines the advantages of low switching voltage (MOSFET) and high current and voltage (BJT) conductivity [1]. The modular construction of the IGBT transistor causes the formation of additional capacities and parasitic inductance, which during charging are responsible for the shape of the acoustic wave [5]. Another factor responsible for the acoustic waves generation are temperature changes inside the silicon structure caused by current flow across the connectors and supply connections [6].…”
Section: Structure Of the Igbt Transistormentioning
confidence: 99%