Due to the increasing number of applications of power semiconductor devices, more and more attention is being paid to diagnostic methods to determine the condition of working semiconductor components. On the basis of the results of experimental research, a correlation can be observed between the transition between the on/off states of a single IGBT transistor in operation and the acoustic signal emitted by it. Acquisition of acoustic emission signals was obtained using a specialized sensor from Vallen. To record the received signal, a high resolution digital oscilloscope was used, which exported the recorded signal to a file, which enabled further digital processing of the acquired signals. The aim of the study was to determine the usefulness of acoustic emission detection methods to determine the possibility of damage to an element based on the recorded acoustic signal.

The article presents the results of tests related to failure analysis and finding ways to diagnose used semiconductor elements, among others, in power electronics converter systems on vessels and offshore facilities (drilling and production rigs and wind turbines). Diagnostic relationships were found between the temperature change in the above systems and the signals generated in the form of elastic waves of acoustic emission. The authors confirmed the influence of the transistor’s working temperature on its amplitude-frequency spectrum of acoustic emission signals emitted. The range of ‘safe temperatures’ was considered which means temperatures that do not directly affect the damage of the component.

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The article presents the results of experimental research, which is to show a correlation between the change of operating status of single IGBT transistor and its acoustic emission. Sensor signal was obtained with oscilloscope in order to further process it digitally and determine possibility of the damage to the element based on registered acoustic signal.

No abstract