Acoustic phonon sidebands in the emission line of single InAs/GaAs quantum dots

Abstract

We present an experimental and theoretical study of the existence of acoustic phonon sidebands in the emission line of single self-assembled InAs/GaAs quantum dots. Temperature-dependent photoluminescence measurements reveal a deviation from a Lorentzian profile with the appearance of lateral sidebands. We obtain an excellent agreement with calculations done in the framework of the Huang-Rhys formalism. We conclude that the only relevant parameter for the observation of acoustic phonon sidebands is the linewidth of the central zero-phonon line. At high temperature, the quasi-Lorentzian quantum dot line appears to be fully determined by the acoustic phonon sidebands

Effect of detuning on the phonon induced dephasing of optically driven InGaAs/GaAs quantum dots

“…A broad shoulder to the quantum dot line shape due to phonons has also been observed in CW-photoluminescence measurements. 25,26 In the case of the ideal two-level atom, the 3p -peak has a slight arrow-head like shape. The exciton-phonon interaction appears to accentuate the arrow-head.…”

Cooperative recombination of electron-hole pairs in semiconductor quantum wells under quantizing magnetic fields

“…2͑b͒ ͑=1.9 meV͒, ␥͑⌫ LO ͒ is smaller ͑larger͒ than that of the two-dimensional exciton case by two to three times ͑three to four times͒, 37 while very similar to the zero-dimensional case. 38 The deviation of the fitting curve above 80 K for 0-0 LL and above 90 K for 1-1 LL is possibly associated with carrier delocalization and/or deionized impurities at high temperatures. 39 ⌫ 0 ͑ϳ1.9 meV͒ indicates that the SF pulse duration is shorter than 700 fs ͑ =2ប / ⌫ 0 ͒ while the temperature dependence of B TH ͑T͒ agrees with the dephasing dynamics in a zero-dimensional system.…”

Temperature dependence of the zero-phonon linewidth in quantum dots: An effect of the fluctuating environment

“…Temperature-dependent measurements have shown that the line-shape can be described by the superposition of the so-called zero-phonon line (ZPL) and broad side-bands extending on several meV [7][8][9]. These side-bands arise from the radiative recombination of electron-hole pairs assisted by the emission and the absorption of acoustic phonons.…”