Temperature dependence of the zero-phonon linewidth in quantum dots: An effect of the fluctuating environment

Favero, Iván; Berthelot, Alice; Cassabois, Guillaume; Voisin, Christophe; Delalande, Claude; Roussignol, Philippe; Ferreira, Robson; Gérard, Jean‐Michel

doi:10.1103/physrevb.75.073308

Cited by 75 publications

(61 citation statements)

References 19 publications

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“…Moreover, contrarily to the case of charges trapped in the QD, the de-trapping from the defect by absorption of an acoustic phonon can be efficient due to the smaller confinement of the order of 10 meV which is comparable to the typical energy of the acoustic phonons involved with confined states. On the other hand, various experimental studies showed that the fluctuating electrostatic environment, related to the trapping and de-trapping of charges in defects close to a QD, is notably responsible for the zero-phonon line broadening in QDs at low temperature [13,46]. In such context, the de-trapping of charges from the defects is driven by Auger effects, which are also very efficient for trapping holes in defects.…”

Section: B Energy Shifts Of the Neutral Exciton And The Positive Trionmentioning

confidence: 99%

“…The trapping rate γ 3 depends then essentially on Auger processes which are 60 times more efficient than the holes capture in the QD. Concerning the de-trapping rate γ 4 of holes from the defect to the continuum reservoir, either phonons absorption, or Auger processes involving one incident charge in the barrier and one target charge in the defect [1,45,46] which explain the square root power dependence, can be considered. On the one hand, the phonon-assisted mechanism would concern the absorption of acoustic phonons because the optical phonon states are not populated at low temperature [46].…”

Section: B Energy Shifts Of the Neutral Exciton And The Positive Trionmentioning

confidence: 99%

“…Concerning the de-trapping rate γ 4 of holes from the defect to the continuum reservoir, either phonons absorption, or Auger processes involving one incident charge in the barrier and one target charge in the defect [1,45,46] which explain the square root power dependence, can be considered. On the one hand, the phonon-assisted mechanism would concern the absorption of acoustic phonons because the optical phonon states are not populated at low temperature [46]. Moreover, contrarily to the case of charges trapped in the QD, the de-trapping from the defect by absorption of an acoustic phonon can be efficient due to the smaller confinement of the order of 10 meV which is comparable to the typical energy of the acoustic phonons involved with confined states.…”

Section: B Energy Shifts Of the Neutral Exciton And The Positive Trionmentioning

confidence: 99%

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Photoneutralization and slow capture of carriers in quantum dots probed by resonant excitation spectroscopy

et al. 2013

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We investigate experimentally and theoretically the resonant emission of single InAs/GaAs quantum dots in a planar microcavity. Due to the presence of at least one residual charge in the quantum dots, the resonant excitation of the neutral exciton is blocked. The influence of the residual doping on the initial quantum dots charge state is analyzed, and the resonant emission quenching is interpreted as a Coulomb blockade effect. The use of an additional non-resonant laser in a specific low power regime leads to the carrier draining in quantum dots and allows an efficient optical gating of the exciton resonant emission. A detailed population evolution model, developed to describe the carrier draining and the optical gate effect, perfectly fits the experimental results in the steady state and dynamical regimes of the optical gate with a single set of parameters. We deduce that ultra-slow Auger-and phonon-assisted capture processes govern the carrier draining in quantum dots with relaxation times in the 1 -100 µs range. We conclude that the optical gate acts as a very sensitive probe of the quantum dots population relaxation in an unprecedented slow-capture regime.

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Section: B Energy Shifts Of the Neutral Exciton And The Positive Trionmentioning

confidence: 99%

Section: B Energy Shifts Of the Neutral Exciton And The Positive Trionmentioning

confidence: 99%

Section: B Energy Shifts Of the Neutral Exciton And The Positive Trionmentioning

confidence: 99%

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Photoneutralization and slow capture of carriers in quantum dots probed by resonant excitation spectroscopy

et al. 2013

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“…While spectral diffusion may manifest at different timescales 27 , we assume here that this timescale is long compared to the radiative decay time. We also neglect any influence of dark excitonic states 28 .…”

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confidence: 99%

Coherent versus incoherent light scattering from a quantum dot

et al. 2012

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We analyze the light scattered by a single InAs quantum dot interacting with a resonant continuous-wave laser. High resolution spectra reveal clear distinctions between coherent and incoherent scattering, with the laser intensity spanning over four orders of magnitude. We find that the fraction of coherently scattered photons can approach unity under sufficiently weak or detuned excitation, ruling out pure dephasing as a relevant decoherence mechanism. We show how spectral diffusion shapes spectra, correlation functions, and phase-coherence, concealing the ideal radiativelybroadened two-level system described by Mollow.

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“…In dephasing model, shown in the black curve in Fig. 3(a), we assume a temperature-dependent dephasing [21] rate ¼ 0 þ 0 T, with 0 ¼ 0:5 eV K À1 and 0 ¼ =100. We use the dephasing model to describe the experimental data at small detunings on the order of meV, where the dephasing processes are thought to be mediated by absorption or emission of acoustic phonons [21].…”

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confidence: 99%

Resonant Excitation of a Quantum Dot Strongly Coupled to a Photonic Crystal Nanocavity

et al. 2010

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We describe the resonant excitation of a single quantum dot that is strongly coupled to a photonic crystal nanocavity. The cavity represents a spectral window for resonantly probing the optical transitions of the quantum dot. We observe narrow absorption lines attributed to the single and biexcition quantum dot transitions and measure antibunched population of the detuned cavity mode [g ð2Þ ð0Þ ¼ 0:19]. DOI: 10.1103/PhysRevLett.104.073904 PACS numbers: 42.70.Qs, 42.50.Ct, 42.50.Dv, 78.67.Hc Photonic nanocavities coupled to semiconductor quantum dots (QDs) are becoming well developed systems for studying cavity quantum electrodynamics and constructing devices for quantum information processing. Recent experiments have found remarkably strong emission at the cavity resonance even when the QD emission was far detuned [1][2][3][4]. In these experiments the QD was pumped through the wetting layer, which allows for multiexciton processes through the wetting layer or a multi-QD effective continuum. In contrast, in this Letter we investigate the resonant excitation of an InAs quantum dot that is strongly coupled to a photonic crystal cavity. We show that the resonantly excited QD emits efficiently through the cavity mode and model the interaction by a phonon-mediated dephasing model [5][6][7]. In this experiment, the cavity signal effectively becomes a spectrally separated readout channel for high-resolution single quantum dot spectroscopy. In addition, because the QD is resonantly excited, the antibunched cavity emission has the potential for low timing jitter and high photon indistinguishability [7,8].The optical system consists of a photonic crystal (PC) cavity fabricated in a 160-nm thick GaAs membrane which contains a central layer of self-assembled InGaAs QDs. As shown in Fig. 1(c), we employ a grating-integrated cavity (GIC) design [9], based on a linear three-hole defect cavity [10]. The GIC design incorporates a second-order grating around the cavity, as seen in the perturbations in Figs. 1(b) and 1(c), which couple plane waves with low in-plane k vectors with the cavity mode.We first characterize the QD-cavity system by its photoluminescence (PL) under nonresonant excitation at a temperature between 10 and 50 K. A continuous-wave (cw) laser at p ¼ 860 nm excites electron-hole pairs which can relax through a phonon-mediated process into radiative levels of the QD [ Fig. 1(d)]. Figure 1(e) plots the anticrossing between the QD-like and cavitylike states. Fits to the anticrossing spectra yield the system parameters summarized in Fig. 1(d).We measure the reflection of the cavity by the crosspolarized reflectivity method illustrated in Fig. 1(a), as in our earlier work [11]. The cavity is polarized at 45 to the vertical input beam, while the reflection is detected in the horizontal polarization on a charge coupled device (CCD). The table lists the system parameters derived from the measurements, where g, , Ã are the vacuum Rabi frequency, cavity field decay rate, and dipole dephasing rate, respectively. The dip...

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Temperature dependence of the zero-phonon linewidth in quantum dots: An effect of the fluctuating environment

Cited by 75 publications

References 19 publications

Photoneutralization and slow capture of carriers in quantum dots probed by resonant excitation spectroscopy

Photoneutralization and slow capture of carriers in quantum dots probed by resonant excitation spectroscopy

Coherent versus incoherent light scattering from a quantum dot

Resonant Excitation of a Quantum Dot Strongly Coupled to a Photonic Crystal Nanocavity

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