Acoustic surface wave filters

Tancrell, R.H.; Holland, M. G.

doi:10.1109/proc.1971.8180

Cited by 308 publications

(55 citation statements)

References 22 publications

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“…Based on device specifications and design principles determined by the requirements of circuit the input/output IDTs of the SAW are designed [6,7]. The techniques for fabricating SAW devices are similar to ULSI techniques.…”

Section: Methodsmentioning

confidence: 99%

Applications of piezoelectric ZnO film deposited on diamond-like carbon coated onto Si substrate under fabricated diamond SAW filter

Tang

Chen

Hwang³

et al. 2004

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Applications of piezoelectric ZnO film deposited on diamond-like carbon coated onto Si substrate under fabricated diamond SAW filter

Tang

Chen

Hwang³

et al. 2004

Journal of Crystal Growth

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“…According to SAW theory, the frequency response of interdigital transducer (IDT) equals the Fourier transform of the envelope function of IDT, and the frequency response of SAW device with MSC is the product of the transfer functions of two apodized IDTs [12][13][14][15]. In Ref.…”

Section: Principles Of Wavelet Reconstruction Processor Using Saw Devmentioning

confidence: 99%

Dual track architecture and time synchronous scheme for wavelet reconstruction processor using SAW device based on MSC

Wen

Chen

et al. 2008

Sensors and Actuators A: Physical

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“…Noting that the difference in heights between the central and the first subsidiary peaks is 26 dB, we assume that the SAW filter characteristics can be described using the simplest δ-function model [12]. In this model, magnitude of the frequency response of filters is expressed as…”

Section: Saw Velocity Dispersionmentioning

confidence: 99%

Velocity dispersion in GaN-based surface acoustic wave filters on (0001) sapphire substrates

Shigekawa

Nishimura

Yokoyama

et al. 2005

IEICE Electron. Express

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Abstract:We fabricated surface acoustic wave (SAW) filters on three nominally 2-µm-thick undoped GaN layers grown on (0001) sapphire substrates. We extracted SAW velocities for frequencies of the central and subsidiary peaks in the |S 21 | spectra by applying the δ-function model. We further obtained thicknesses of respective GaN layers by analysing their reflectivity spectra, and established the SAW velocity dispersion. The respective dispersion data were found to lie close to each other, which suggests that characteristics of GaN-based SAW devices can be designed with improved accuracy. Keywords: GaN, sapphire, surface acoustic wave, SAW, velocity dispersion Classification: New functional devices and materials References[1] O. Ambacher, "Growth and applications of Group III nitrides," J. Phys. D: Appl. Phys., vol. 31, no. 20, pp. 2653-2710, Oct. 1998

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Acoustic surface wave filters

Cited by 308 publications

References 22 publications

Applications of piezoelectric ZnO film deposited on diamond-like carbon coated onto Si substrate under fabricated diamond SAW filter

Applications of piezoelectric ZnO film deposited on diamond-like carbon coated onto Si substrate under fabricated diamond SAW filter

Dual track architecture and time synchronous scheme for wavelet reconstruction processor using SAW device based on MSC

Velocity dispersion in GaN-based surface acoustic wave filters on (0001) sapphire substrates

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