Acoustoelectric Amplifier With 1.2-dB Insertion Gain Monolithic Graphene Construction and Continuous Wave Operation

Malocha, D.C.; Carmichael, Christopher; Weeks, Arthur R.

doi:10.1109/tuffc.2020.2984176

Cited by 17 publications

(6 citation statements)

References 9 publications

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“…Considering only values in air, the resistivity varies from 0.8 to 4.8 kΩ/, in good agreement with properties of CVD graphene transferred onto Si/SiO 2 [36]. The DC mobility of our graphene is expected to be of the order of 1500 cm 2 V −1 s −1 as compared to one in the graphene/Si/SiO 2 , as well [16,25,27]. Meanwhile, the acousto-electronic mobility, given in table 1, differs significantly from DC mobility.…”

Section: Discussion and Concluding Remarkssupporting

confidence: 75%

“…Even if the control of the electrical properties of 2D materials, along with the electrical contacts, remains challenging [24], its resistivity can be tuned either electrically or through processing in order to optimize the AE coupling. For instance, Malocha et al have recently demonstrated that graphene is a good candidate for AE energy coupling devices and AE SAW amplifier architectures based on LiNbO 3 with operational frequencies of 145 and 933 MHz [25,26]. Moreover, they succeeded in tuning the resistivity from 975 to 1500 Ω/, through a gate/oxide structure on a piezoelectric substrate.…”

Section: Introductionmentioning

confidence: 99%

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Acousto-electric measurements at 2.5 GHz on graphene transferred onto YX128°-LiNbO₃

et al. 2023

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Surface acoustic wave delay lines with operational frequency of 2.5 GHz have been designed to measure the acousto-electronic transport of carriers in graphene transferred onto YX128°-LiNbO3 piezoelectric substrate. The monolayer of graphene on LiNbO3 presented sheet resistance in the range of 733 to 1230 Ω/□ and ohmic contact resistance with gold of 1880 to 5200 Ωµm. The measurements with different interaction lengths on graphene bars have allowed to extract carrier absorption and mobility parameters from acousto-electric current. Graphene presented higher acousto-electronic interaction in the GHz range than previously reported values in the range of 100s MHz with carrier absorption losses of 109 m-1 and a mobility for acoustically generated charges of 101 cm2/Vs.

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Section: Discussion and Concluding Remarkssupporting

confidence: 75%

Section: Introductionmentioning

confidence: 99%

Acousto-electric measurements at 2.5 GHz on graphene transferred onto YX128°-LiNbO₃

et al. 2023

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“…Second, the limited k 2 does not provide sufficient amplification. Recent results using suspended [93] or solidly mounted LiNbO 3 thin films [135][136][137][138] could potentially lead to application-worthy amplifier applications.…”

Section: Emerging Acoustic Applicationsmentioning

confidence: 99%

RF acoustic microsystems based on suspended lithium niobate thin films: advances and outlook

Gong

2021

J. Micromech. Microeng.

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This paper presents a review of the radio frequency thin-film lithium niobate (LiNbO3) based acoustic microsystems. Thanks to their high electromechanical coupling (k 2), low loss, and great frequency scalability, thin-film LiNbO3 has outperformed state-of-the-art acoustic technologies in the past decade. This paper first reviews the acoustic wave transduction and propagation in thin-film LiNbO3 and then showcases the emerging acoustic applications. Outlook for further platform development and more functions is offered for future thin-film LiNbO3 based acoustic microsystems development.

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“…Furthermore, the operation frequency of SAW is practically up to ~3 GHz, before surface losses and small features in lithography become limiting. Owing to the recent progress in thin-film deposition and bonding, as well as high piezoelectric couplings provided by lithium niobate (LN), significant improvements in performance of SAW AE devices have been reported [3,4,5]. Suspended thin-film LN can support Lamb waves with higher phase velocities compared to SAW, therefore, allowing for higher frequency operation [6].…”

Section: Introductionmentioning

confidence: 99%

Lithium Niobate on Silicon Lamb Mode Acoustoelectric Waveguide With 5.5 Db Sustained Terminal Gain

Mansoorzare,

Abdolvand

2022

2022 Solid-State, Actuators, and Microsystems Workshop Technical Digest

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In this work, sustained terminal gain is reported for the first time in micromachined lithium niobate (LN) on silicon (Si) Lamb mode waveguides through acoustoelectric amplification. In such acoustically thin waveguides, the large coupling between the Lamb waves and the drifting electrons in Si gives rise to a very efficient transfer of momentum from electrons to elastic phonons, rendering the waveguide a traveling wave amplifier. In a geometrically optimized waveguide, up to 5.5 dB terminal gain is achieved by dissipating less than 6.5 milliwatts of DC bias power. This is measured for input RF signals up to -20 dBm and gain compression is observed for larger inputs with its characteristic impacted by the DC bias level and the device geometry. Further design improvements are expected to increase the terminal gain, hence, justifying the implementation of micro-acoustic RF amplifiers.

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Acoustoelectric Amplifier With 1.2-dB Insertion Gain Monolithic Graphene Construction and Continuous Wave Operation

Cited by 17 publications

References 9 publications

Acousto-electric measurements at 2.5 GHz on graphene transferred onto YX128°-LiNbO₃

Acousto-electric measurements at 2.5 GHz on graphene transferred onto YX128°-LiNbO₃

RF acoustic microsystems based on suspended lithium niobate thin films: advances and outlook

Lithium Niobate on Silicon Lamb Mode Acoustoelectric Waveguide With 5.5 Db Sustained Terminal Gain

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Acoustoelectric Amplifier With 1.2-dB Insertion Gain Monolithic Graphene Construction and Continuous Wave Operation

Cited by 17 publications

References 9 publications

Acousto-electric measurements at 2.5 GHz on graphene transferred onto YX128°-LiNbO3

Acousto-electric measurements at 2.5 GHz on graphene transferred onto YX128°-LiNbO3

RF acoustic microsystems based on suspended lithium niobate thin films: advances and outlook

Lithium Niobate on Silicon Lamb Mode Acoustoelectric Waveguide With 5.5 Db Sustained Terminal Gain

Contact Info

Product

Resources

About

Acousto-electric measurements at 2.5 GHz on graphene transferred onto YX128°-LiNbO₃

Acousto-electric measurements at 2.5 GHz on graphene transferred onto YX128°-LiNbO₃