Surface acoustic wave delay lines with operational frequency of 2.5 GHz have been designed to measure the acousto-electronic transport of carriers in graphene transferred onto YX128°-LiNbO3 piezoelectric substrate. The monolayer of graphene on LiNbO3 presented sheet resistance in the range of 733 to 1230 Ω/□ and ohmic contact resistance with gold of 1880 to 5200 Ωµm. The measurements with different interaction lengths on graphene bars have allowed to extract carrier absorption and mobility parameters from acousto-electric current. Graphene presented higher acousto-electronic interaction in the GHz range than previously reported values in the range of 100s MHz with carrier absorption losses of 109 m-1 and a mobility for acoustically generated charges of 101 cm2/Vs.

Epitaxial thin films of lithium niobate with a thickness of 160 nm, oriented along the crystallographic c axis, were grown by direct liquid injection chemical vapor deposition on c-sapphire substrates. Different families of very high-frequency surface acoustic waves with general polarization exist in such piezoelectric films on high-velocity substrates. Surface Brillouin light scattering measurements, complemented with fast finite element analysis of wave dispersion, demonstrate Rayleigh, leaky shear, and leaky longitudinal surface waves, excited at frequencies between 10 and 30 GHz. The Brillouin technique reveals dispersion and anisotropy of propagation without the implementation of high-frequency surface acoustic wave transducers.