Actinic review of EUV masks: Status and recent results of the AIMS EUV system

Weiß, Markus; Hellweg, Dirk; Koch, Markus; Peters, Jan Hendrik; Perlitz, Sascha; Garetto, Anthony; Magnusson, Krister; Capelli, Renzo; Jindal, V. K.

doi:10.1117/12.2086265

Cited by 5 publications

(3 citation statements)

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“…The AIMS TM EUV clearly reaches its specification with an excellent aberration performance on scanner optics quality level. In a previous publication [4] a flare-level <1% has been shown, clearly meeting the specification. The illumination optics has been qualified in terms of the illumination pupil performance, see Figure 6.…”

Section: Optics Performancesupporting

confidence: 53%

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Actinic review of EUV masks: performance data and status of the AIMS EUV System

et al. 2016

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The EUV mask infrastructure is of key importance for the successful introduction of EUV lithography into volume production. In particular, for the production of defect free masks an actinic review of potential defect sites is required. ZEISS and the SUNY POLY SEMATECH EUVL Mask Infrastructure consortium started a development program for such an EUV aerial image metrology system, the AIMS™ EUV. In this paper, we provide measurement data on the system's key specifications and discuss its performance and capability status.

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Section: Optics Performancesupporting

confidence: 53%

“…In particular the high image quality and the ability to resolve target node features have been shown [3] [4]. Key application of the AIMS TM EUV is the review of defects.…”

Section: Tool Performance Datamentioning

confidence: 99%

Actinic review of EUV masks: performance data and status of the AIMS EUV System

et al. 2016

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“…Currently, utilizing extreme ultraviolet lithography to produce more powerful semiconductor chips is the most important application, which has driven the development of optics and a compact light source for the wavelength of 13.5 nm [1]. Other examples of applications making use of compact light sources are in the field of EUV lithography, i.e., use for mirror contamination studies [2][3][4], qualification of optical elements and masks [5][6][7][8][9][10][11] or photo resist development [12,13]. Further examples are X-ray microscopy in the spectral range of the water window (2.4-4.4 nm) for the imaging of biological samples in their natural wet environment [14][15][16][17][18] or XUV-based reflectometry for surface analysis [19,20].…”

Section: Introductionmentioning

confidence: 99%

Extreme Ultraviolet Radiation Sources from Dense Plasmas

Bergmann

2023

Atoms

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The concept of dense and hot plasmas can be used to build up powerful and brilliant radiation sources in the soft X-ray and extreme ultraviolet spectral range. Such sources are used for nanoscale imaging and structuring applications, such as EUV lithography in the semiconductor industry. An understanding of light-generating atomic processes and radiation transport within the plasma is mandatory for optimization. The basic principles and technical concepts using either a pulsed laser or a gas discharge for plasma generation are presented, and critical aspects in the ionization dynamics are outlined within the framework of a simplified atomic physics model.

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Demonstration of 22-nm half pitch resolution on the SHARP EUV microscope

Benk

Goldberg

Wojdyla

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The Semiconductor High-Numerical-aperture (NA) Actinic Reticle Review Project (SHARP) is an extreme ultraviolet (EUV)-wavelength, synchrotron-based microscope dedicated to advanced EUV photomask research. The instrument is designed to emulate current and future generations of EUV lithography (EUVL). The performance of the SHARP microscope has been well characterized for its low-NA lenses, emulating imaging in 0.25 and 0.33 NA lithography scanners. Evaluating the resolution of its higher-NA lenses, intended to emulate future generations of EUV lithography, requires a photomask with features down to 22-nm half pitch. The authors fabricated a sample with features down to 20-nm half pitch, exposing a wafer with a standard multilayer coating in the Berkeley microfield exposure tool, and used it to demonstrate real-space imaging down to 22-nm half pitch on the SHARP microscope. The demonstrated performance of SHARP's high-NA zoneplates, together with the extended capabilities of the tool, provide a platform that is available today, suited for research targeted at upcoming generations of EUVL many years into the future.

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Actinic review of EUV masks: Status and recent results of the AIMS EUV system

Cited by 5 publications

References 1 publication

Actinic review of EUV masks: performance data and status of the AIMS EUV System

Actinic review of EUV masks: performance data and status of the AIMS EUV System

Extreme Ultraviolet Radiation Sources from Dense Plasmas

Demonstration of 22-nm half pitch resolution on the SHARP EUV microscope

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