Action of Magnetic and X-Ray Fields on Electro-Physical Properties of Temperature Sensors

Abstract

Abstract. The influence of X-ray and magnetic fields on the formation of radiation defects in silicon temperature sensors is investigated by the method of capacitance spectroscopy. It is shown that the defects which are generated by X-ray radiation are more sensitive to weak magnetic fields in comparison with structural defects. Effects of weak magnetic fields (B=0.17 Tl) on the pattern changes VFC of barrier structures are opposite to the action of X-ray radiation.