2008
DOI: 10.1103/physrevb.77.081301
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Activation gaps of fractional quantum Hall effect in the second Landau level

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Cited by 119 publications
(133 citation statements)
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“…The simplest one is varying the chemical potential to place the system in a higher Landau level, effectively at filling ν = 8/3, where FQHE has been seen [119][120][121]. More recent sample fabrication techniques also allow to access the regime of large Landau level mixing (with the mixing parameter κ 2 [122,123]), which is expected to strongly modify the short-range components of the Coulomb interaction.…”
Section: Discussionmentioning
confidence: 99%
“…The simplest one is varying the chemical potential to place the system in a higher Landau level, effectively at filling ν = 8/3, where FQHE has been seen [119][120][121]. More recent sample fabrication techniques also allow to access the regime of large Landau level mixing (with the mixing parameter κ 2 [122,123]), which is expected to strongly modify the short-range components of the Coulomb interaction.…”
Section: Discussionmentioning
confidence: 99%
“…The existence of a neighboring single layer non-Abelian state in the phase diagram, which can be realized by tuning the interlayer tunneling/repulsion, suggests that experiments have a chance of realizing this transition. Furthermore, recent detailed experimental studies of the energy gaps of the ν = 8/3 FQH state in single-layer systems indicate that it might be an exotic state, as opposed to a conventional Laughlin or hierarchy state [15]. This observation, together with the result of this paper that the Z 4 parafermion state lies close to the experimentally observed (330) state in the quantum Hall phase diagram, suggests that the Z 4 parafermion state ought to be considered as a candidate -in addition to other proposed possibilities (e.g.…”
mentioning
confidence: 99%
“…Including the nite thickness eect (FTE) it was shown [25,18] that in the LLL (n = 0) (and the SLL (n = 1))…”
Section: Introductionmentioning
confidence: 99%
“…We consider two nite thickness potential models [25,18], viz. (i) the innite square-well (SQ) potential which is appropriate for 2D GaAs quantum well structures, and (ii) the FangHoward (FH) variational potential for a heterostructure.…”
Section: Introductionmentioning
confidence: 99%