Activation of dopant in silicon by ion implantation under heating sample at 200 °C

Sameshima, Toshiyuki; Yasuta, Keisuke; Hasumi, Masahiko; Nagao, Tomokazu; Inouchi, Yoshio

doi:10.1007/s00339-018-1656-8

Cited by 7 publications

(3 citation statements)

References 11 publications

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“…Post-annealing above 800 1C is commonly used for dopant activation 43 and several thermal treatment schemes have been proposed to increase activation efficiency. 44,45 Single step annealing at high temperature yields P activation of the order of 40-60%. Conversely, specific thermal treatments decoupling the damage recovery process and crystal regrowth from the electrical activation were demonstrated to significantly improve dopant activation.…”

Section: Discussionmentioning

confidence: 99%

Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants

et al. 2020

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Section: Discussionmentioning

confidence: 99%

Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants

et al. 2020

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“…The microwave transmittance under the light illumination of the ion-implanted surface T p was also measured to obtain the photo-induced minority carrier effective lifetime τ eff . τ eff was analyzed by the numerical program of carrier diffusion and annihilation to estimate the carrier recombination velocity at the implanted surfaces [18].…”

Section: Model and Experimental Proceduresmentioning

confidence: 99%

Argon Precursor Ion Implantation Used to Activate Boron Atoms in Silicon at Low Temperatures

et al. 2020

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The two-step implantation of argon precursor ion (Ar + ) followed by boron ion (B + ) in single crystalline silicon at room temperature is discussed to activate boron implanted region by post heating at 300 followed by 400 o C. The implantation of Ar + at a dose of 6.0 × 10 13 cm −2 at 70 keV with a projected range R p (Ar) of 80 nm followed by B + at 1.0 × 10 15 cm −2 and 15 keV with R p (B) of 62 nm caused crystalline disordered states with the effective disordered amorphous depth A eff of 32 nm, while the post heating of 300 o C for 90 min followed by 400 o C for 30 min markedly decreased A eff to 1.8 nm. The effective recrystallization by the post heating promoted activation of doped region associated with decrease in the sheet resistivity to 189 /sq by the post heating. The activation ratio was estimated as 0.33 under the assumption of a hole mobility of 50 cm 2 /Vs in the boron implanted region.INDEX TERMS Activation, carrier density, carrier lifetime, defect, low temperature.

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“…4) Dopants were also activated during hot implantation because the silicon substrate was actually cycled between low-dose implantation and low-temperature annealing. 5) Therefore, fundamental studies are needed for the initial activation behavior at low temperatures so that the substrate temperature, scan speed and dose rate during hot implantation can be optimized to improve dopant activation.…”

Section: Introductionmentioning

confidence: 99%

Initial activation behavior of boron at low temperatures with implantation doses below the amorphization threshold

Chang

Lin

Lee

2020

Jpn. J. Appl. Phys.

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The initial behavior of boron activation at low temperatures was experimentally studied at implantation doses below the threshold for amorphization of the silicon substrates. A test structure was developed to analyze the activation in the early stage of annealing at temperatures below 400 °C. Saturation of the activation level following the decay of the activation rate was observed during annealing for long times at temperatures between 350 °C and 400 °C. Boron activation was enhanced due to the channeling effect of the implanted boron ions when the implantation tilt angle was reduced from 7°to 0°. However, the active boron percentage declined with increasing implantation dose. Boron activation was degraded by silicon implantation at low doses following the boron implantation. The low activation energies extracted from the experimental data indicated that boron activation was limited by the metastable defect complexes under subamorphizing implantation.

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Activation of dopant in silicon by ion implantation under heating sample at 200 °C

Cited by 7 publications

References 11 publications

Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants

Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants

Argon Precursor Ion Implantation Used to Activate Boron Atoms in Silicon at Low Temperatures

Initial activation behavior of boron at low temperatures with implantation doses below the amorphization threshold

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