2019
DOI: 10.1088/1361-6528/ab0329
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Active broadband terahertz wave impedance matching based on optically doped graphene–silicon heterojunction

Abstract: Broadband terahertz (THz) impedance matching is important for both spectral resolution improvement and THz anti-radar technology. Herein, graphene-silicon hybrid structure has been proposed for active broadband THz wave impedance matching with optical tunability. The main transmission pulse measured in the time domain indicates a modulation depth as high as 92.7% totally from the graphene-silicon interface. The interface reflection from the graphene-silicon junction implies that an impedance matching condition… Show more

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Cited by 11 publications
(6 citation statements)
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“…To dynamically manipulate THz interfacial impedance matching, Du et al have proposed an optical method to actively control THz impedance matching at the air/graphene/silicon interface, as shown in figure 4(d) [72]. Under photoexcitation by a 532 nm continuous wave laser, the optical doped carriers are introduced at the graphene/silicon interface (figure 4(e)), which can tune the THz conductivity of graphene/silicon to achieve the impedance matching at approximately 87 mW, as shown in figure 4(f).…”
Section: Thz Interfacial Impedance Matchingmentioning
confidence: 99%
See 2 more Smart Citations
“…To dynamically manipulate THz interfacial impedance matching, Du et al have proposed an optical method to actively control THz impedance matching at the air/graphene/silicon interface, as shown in figure 4(d) [72]. Under photoexcitation by a 532 nm continuous wave laser, the optical doped carriers are introduced at the graphene/silicon interface (figure 4(e)), which can tune the THz conductivity of graphene/silicon to achieve the impedance matching at approximately 87 mW, as shown in figure 4(f).…”
Section: Thz Interfacial Impedance Matchingmentioning
confidence: 99%
“…However, the first and second transmitted THz pulses at the air/silicon interface slightly decrease with the pump power, as shown in figure 4(g). Notably, photoinduced doping not only achieves broadband THz impedance matching, but also acquires high modulation depth (92.7%) with only one layer graphene through controlling the interfacial properties [72]. This active all-optical method might be ultrafast at the scale of the photoexcited carrier lifetime.…”
Section: Thz Interfacial Impedance Matchingmentioning
confidence: 99%
See 1 more Smart Citation
“…Moreover, compared with the surface plasmons in metal, the plasmons in graphene have a longer excitation lifetime and can be effectively tuned, which make this configuration suitable for application in the THz field [105][106][107]. It has been theoretically and experimentally proved that graphene can be used for THz devices in different domains, such as by using active metasurfaces [108,109], and newer, better devices can be developed [110][111][112][113][114][115][116][117][118]. However, it is necessary to improve the relevant mechanism and manufacturing technique to obtain advanced industrially applicable devices.…”
Section: (C) Two-dimensional Materials and Phase Transition Materials Fmentioning
confidence: 99%
“…For example, in VO 2 film, THz reflection has been dynamically tuned by adjusting the temperature where conductivity is close to or far from the impedance matching state . Also, graphene achieves THz antireflection by controlling the number of stacked graphene layers or the angle of THz incident wave to reaching the impedance matching point. , Besides, nanostructured metal films, , conductivity polymer, and oxide semiconductor have also been studied for THz antireflection through the mechanism of impedance matching. However, the preparation of these nanoscale functional films usually requires expensive equipment or complex processes, and these studies are limited to THz antireflection rather than the efficient modulation of the reflected wave.…”
Section: Introductionmentioning
confidence: 99%