“…With the emergence of advanced power devices like Silicon Carbide MOSFETs and CoolMOS superjunction devices, it has become more important to investigate the performance and robustness of the body diodes in switching applications [9], [10]. It has been previously shown that the body diode can be actually be a suitable replacement for the PiN diodes when it comes to soft switching converters such as ZVS [11]- [15]; however, the use of the body diode may create a significant robustness issue when it comes to hard commutation switching [16]- [18]. To overcome this, different MOSFET designs were tested including lateral Power MOSFET [19], [20], VDMOSFT [21], VMOS, LDMOS, TrenchMOS [22], UMOS [23], semi-super-junction [24] and eventually super-junction MOSFETs [25], [26] or CoolMOS [27] all of which although showed certain improvements, but could not help the overall poor reverse recovery performance of the body diodes during hard commutation.…”