An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

Jahdi, Saeed; Alatise, Olayiwola; Bonyadi, Roozbeh; Alexakis, Petros; Fisher, C; Gonzalez, Jose Ortiz; Li, Ran; Mawby, P.A.

doi:10.1109/tpel.2014.2338792

Cited by 78 publications

(21 citation statements)

References 32 publications

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“…Switching loss of two parallel power modules in V‐phase at varied connected position is given in Table 1. Recovery loss of SiC MOSFET body diodes is very low, just as with SiC SBD 17,18 ; thus, switching loss is estimated as the sum of turn‐on loss and turn‐off loss. Besides, switching loss of Module α in Case A is taken as 100%.…”

Section: Experimental Results For Switching Loss Imbalancementioning

confidence: 99%

Development of inverter structure for reducing switching loss imbalance among parallel connection and among three phases

Ando

Kogure

Ogawa

et al. 2020

Electrical Engineering Japan

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Recently, SiC power devices were developed to reduce the size and weight of the power converter circuit. This paper presents a three‐phase inverter structure for reducing imbalances in the switching loss among power modules connected parallel to one another and among the three phases. A proposed double‐sided structure achieved an imbalance of less than 2% in the experimental switching loss using SiC power modules. In addition, it is shown that the double‐sided structure realized stable switching behavior under four SiC power modules connected in parallel.

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Section: Experimental Results For Switching Loss Imbalancementioning

confidence: 99%

Development of inverter structure for reducing switching loss imbalance among parallel connection and among three phases

Ando

Kogure

Ogawa

et al. 2020

Electrical Engineering Japan

View full text Add to dashboard Cite

show abstract

“…Switching loss of two parallel power modules in V-phase at varied connected position is given in Table 1. Recovery loss of SiC MOSFET body diodes is very low, just as with SiC SBD 17,18 ; thus, switching loss is estimated as the sum of turnon loss and turn-off loss. Besides, switching loss of Module in Case A is taken as 100%.…”

Section: Results Of Evaluation With Varied Connection Positionsmentioning

confidence: 99%

Development of Inverter Structure for Reducing Switching Loss Imbalance among Parallel Connection and among Three Phases

et al. 2020

View full text Add to dashboard Cite

Recently, SiC power devices were developed to reduce the size and weight of the power converter circuit. This paper presents a three-phase inverter structure for reducing imbalances in the switching loss among power modules connected parallel to one another and among the three phases. A proposed double-sided structure achieved an imbalance of less than 2% in the experimental switching loss using SiC power modules. In addition, it is shown that the double-sided structure realized stable switching behavior under four SiC power modules connected in parallel. K E Y W O R D Sparallel connection, silicon carbide, stray inductance, switching loss Electr Eng Jpn. 2020;212:59-66.

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“…The reason for this significant disparity in the V GS transient between the CoolMOS TM device and the remaining devices is the input and output capacitance. Shown in Table III are the values of the input and output capacitances [27,28] that enables reverse conduction capability. The switching performance of the body diode has been measured using the circuit shown in Fig.…”

Section: Switching Performancementioning

confidence: 99%

Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

Gonzalez

Jahdi

et al. 2020

IEEE Trans. Ind. Electron.

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137

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An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

Cited by 78 publications

References 32 publications

Development of inverter structure for reducing switching loss imbalance among parallel connection and among three phases

Development of inverter structure for reducing switching loss imbalance among parallel connection and among three phases

Development of Inverter Structure for Reducing Switching Loss Imbalance among Parallel Connection and among Three Phases

Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

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