2012 IEEE International Geoscience and Remote Sensing Symposium 2012
DOI: 10.1109/igarss.2012.6350708
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Active load modules for W-band radiometer calibration

Abstract: An active cold load (ACL) and an active hot load (AHL) circuit were developed in W-band (75 - 110 GHz) and manufactured in IAF's metamorphic high electron mobility transistor (mHEMT) technology. The millimeter-wave monolithic integrated circuits (MMICs) were radiometricly characterized with a dedicated hot cold on wafer noise measurement setup and packaged into waveguide modules. The active load modules were then again characterized, to be used as reference loads in radiometry systems with switching front-ends… Show more

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Cited by 8 publications
(8 citation statements)
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“…cov (v j (t j ) , T i (t i = t j )) = 0 (19) as v(t) = g(t)v (t) according to (10) in the article and it is assumed that no ambiguity present in the knowledge of T i 's. From Cases 1 and 2, one can conclude the generic expression for the covariance terms as follows: (13) In this appendix, the covariance terms in (7), i.e., cov(x m , x n ), where x's represent the voltages and temperatures in the calibration equation 4, are derived for AR(1) gain processes in the following cases.…”
Section: Appendix a Proof Of Equation (11)mentioning
confidence: 99%
“…cov (v j (t j ) , T i (t i = t j )) = 0 (19) as v(t) = g(t)v (t) according to (10) in the article and it is assumed that no ambiguity present in the knowledge of T i 's. From Cases 1 and 2, one can conclude the generic expression for the covariance terms as follows: (13) In this appendix, the covariance terms in (7), i.e., cov(x m , x n ), where x's represent the voltages and temperatures in the calibration equation 4, are derived for AR(1) gain processes in the following cases.…”
Section: Appendix a Proof Of Equation (11)mentioning
confidence: 99%
“…Table 1 also shows an overview of the utilized transistor technologies for previous ACL designs. While InP HEMTs would be the technology of choice for lowest achievable noise temperature [7], GaAs mHEMTs are a lower cost alternative with equivalent performance [8, 13]. For this work, Fraunhofer IAFs in-house 50 nm mHEMT process was chosen.…”
Section: Metamorphic High Electron Mobility Transistor (Mhemt) Technomentioning
confidence: 99%
“…The transistors in both active loads are realized with a gate length of 2 × 15 µm. To verify the simulation approach, especially the noise prediction, the active loads were previously manufactured as stand-alone devices [13]. Except for the DC-routing, the cores of the active loads are identical to the ones seen in Fig.…”
Section: Circuit Designmentioning
confidence: 99%
“…Low noise amplifiers based on high electron mobility transistors (HEMT) reach state-of-the-art low noise and high frequency performance [1,2,3]. While improvements in transistor technology reduce the achievable noise figure (Fmin) the input matching circuit of the amplifier still needs to present the optimum source impedance r OPT to the transistor in the fust stage of the amplifier to achieve noise figures as low as possible.…”
Section: Introductionmentioning
confidence: 99%