Active-matrix monolithic gas sensor array based on MoS2 thin-film transistors

Abstract

Highly sensitive and system integrable gas sensors play a significant role in industry and daily life, and MoS2 has emerged as one of the most promising two-dimensional nanomaterials for gas sensor technology. In this study, we demonstrate a scalable and monolithically integrated active-matrix gas sensor array based on large-area bilayer MoS2 films synthesized via two-successive steps: radio-frequency magnetron sputtering and thermal sulfurization. The fabricated thin-film transistors exhibit consistent electrical performance over a few centimeters area and resulting gas sensors detect NO2 with ultra-high sensitivity across a wide detection range, from 1 to 256 ppm. This is due to the abundant grain boundaries of the sputtered MoS2 channel, which perform as active sites for absorption of NO2 gas molecules. The demonstrated active-matrix gas sensor arrays display good switching capabilities and are anticipated to be readily integrated with additional circuitry for different gas sensing and monitoring applications.

Temperature-Based Selective Detection of Hydrogen Sulfide and Ethanol with MoS2/WO3 Composite

“…Chemical field-effect transistor or chemiresistive and electrochemical sensors based on metal-oxides, polymers, and two-dimensional materials are among the most commonly used sensors for the detection of various toxic gases present in the environment and for biomedical purposes. − Among these, metal-oxide-based chemiresistive sensors are ideal candidates because of their low cost, simple structure, facile integration with electronics technology, and excellent sensitivity. − Their variable morphologies have governed enormous applications in the area of sensing. ,, One of the common problems related to metal-oxide semiconductor (MOS)-based sensors is their higher operating temperature and inferior selectivity. Among various MOS, WO 3 , an n-type semiconductor, possesses a larger bandgap, high thermal and chemical stability, and better sensing features, − except for its poor selectivity and low sensing performance at higher humidity levels. , Various other strategies, such as doping, grain size reduction, or composite formation with semiconducting materials, have been adopted to address some of these issues. − For instance, MoS 2 , a semiconducting transition metal dichalcogenide (TMDC), has been successfully employed in various sensing applications. , Inferior sensitivity, slow response and recovery to gas molecules, and the negative impact of humidity on sensing performance hinder its practical applications .…”

Ultra-High Response Detection of Alcohols Based on CdS/MoS2 Composite

“…Meanwhile, 2D layered molybdenum disulfide (MoS 2 ) as another sulfide owns various applications [18,19] due to its tunable band gap (1.2-1.9 eV) dependent on the number of layers and has dominated research hotpots. It is supposed that sensing mechanisms for organic vapors in 2D family materials are related to the change in conductivity and charge transfer process due to the different depletion layer and space layers [20][21][22]. For instance, Yan et al [23] successfully synthesized SnO 2 @MoS 2 composites and obtained a better ethanol response than pure SnO 2 .…”

Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier

“…Having established that the BLG is transformed into FBLG with a small bandgap, we now use it as an interlayer between metal contacts and semiconducting TMDs to investigate the Fermi level pinning effect. We choose MoS2 as the conducting channel for the fabricated FET device, since this material is most intensively studied among TMDs with promising advantages for various applications in field-gated electronics 28 , optoelectronics 29 , spintronics 30 , valleytronics 31 , sensors 32 and so on 33 . Multilayer MoS2 with a thickness of about 10 nm is first mechanically exfoliated on a SiO2/Si substrate using the scotch-tape method 34 .…”