Active Millimeter-Wave Phase-Shift Doherty Power Amplifier in 45-nm SOI CMOS

Agah, Amir; Dabag, Hayg-Taniel; Hanafi, Bassel; Asbeck, P.M.; Buckwalter, James F.; Larson, L.E.

doi:10.1109/jssc.2013.2269854

Cited by 69 publications

(18 citation statements)

References 20 publications

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“…The amplifier was measured under several bias conditions which 8 offer various tradeoffs in gain, OP1dB, PAEmax and PAEback-off. A chip photograph of the Doherty power amplifier is shown in Figure 7.…”

Section: Resultsmentioning

confidence: 99%

Ka‐band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back‐off PAE using GaAs PHEMTS

Curtis

Pham

Aryanfar

2016

IET Microwaves, Antennas & Propagation

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TitleKa-band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back-off PAE using GaAs PHEMTS Abstract: We present the design and development of a fully integrated, two stage Doherty power amplifier (DPA) in the Ka-Band. The amplifier is fabricated in a 0.15-µm Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. The DPA has a center frequency of 26.6 GHz, a measured small signal gain of 10.5 dB, output power at 1-dB compression point (P1dB) of 26.9 dBm, maximum power added efficiency (PAE) of 42%, and PAE of 32% at 6 dB back-off power. To the best of the author's knowledge, this DPA is the first fully integrated millimeter-wave (mm-wave) power amplifier to achieve a record 32% PAE at 6-dB back-off power from 26.9 dBm at Ka-band.

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Section: Resultsmentioning

confidence: 99%

Ka‐band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back‐off PAE using GaAs PHEMTS

Curtis

Pham

Aryanfar

2016

IET Microwaves, Antennas & Propagation

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“…Simplified scheme of a series, transformer-based DPA, typically adopted in CMOS technology (left). Block scheme of the active phase shift DPA adopted in [62] (right).…”

Section: A Silicon Technologymentioning

confidence: 99%

“…The work of [62] is developed on 45 nm SOI CMOS, for 45 GHz applications (both radars and communications). Several features are used in this design for performance maximization: the main and auxiliary are realized by stacked devices to improve the output power without compromising the impedance level.…”

Section: A Silicon Technologymentioning

confidence: 99%

The Doherty Power Amplifier: Review of Recent Solutions and Trends

Camarchia

Pirola

Quaglia

et al. 2015

IEEE Trans. Microwave Theory Techn.

211

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In this paper, an extensive review of the most up-to-date papers on microwave Doherty power amplifiers is presented. The main applications are discussed, together with the employed semiconductor technologies. The different research trends, all aimed to improve the advantages of the Doherty scheme and to solve its inherent drawbacks, are presented. The first considered topic is the maximization of efficiency and/or linearity, where analog and digital techniques are exploited. Another important trend is the bandwidth enlargement of the Doherty architecture, that involves a large number of papers. Multi-band, multi-mode solutions are also considered, using either fixed or reconfigurable solutions. The final section is dedicated to the most significant Doherty integrated implementations.Index Terms-Doherty power amplifier, gallium arsenide, gallium nitride, linearization, wireless communications.

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“…Also, a cascode power cell structure with the inter-stage matching inductor is exploited to gain high output power and efficiency. In [90], a 45 GHz Doherty PA was reported. A cascode amplifier and slow-wave coplanar waveguides are exploited to improve the performances.…”

Section: Power Amplifier (Pa)mentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

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Active Millimeter-Wave Phase-Shift Doherty Power Amplifier in 45-nm SOI CMOS

Cited by 69 publications

References 20 publications

Ka‐band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back‐off PAE using GaAs PHEMTS

Ka‐band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back‐off PAE using GaAs PHEMTS

The Doherty Power Amplifier: Review of Recent Solutions and Trends

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

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