2012
DOI: 10.1088/0022-3727/45/49/494001
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Active multilayer mirrors for reflectance tuning at extreme ultraviolet (EUV) wavelengths

Abstract: We propose an active multilayer mirror structure for extreme ultraviolet (EUV) wavelengths, which can be adjusted to compensate for reflectance changes. The multilayer structure tunes the reflectance via an integrated piezoelectric layer that can change its dimension due to an externally applied voltage. Here, we present design and optimization of the mirror structure for maximum reflectance tuning. In addition, we present preliminary results showing that the deposition of piezoelectric thin films with the req… Show more

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Cited by 9 publications
(10 citation statements)
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“…Integration on glass is of high importance in order to pave the way to integrate PZT on amorphous structures, such as SiO 2 that is commonly used in semiconductor devices and Mo/Si mirror coatings for extreme ultraviolet (EUV) photolithography. 10,11 Deposition of oxide films, including PZT, directly on Si substrates results in inter-diffusion of oxides into Si and formation of amorphous oxide layer in the substrate-film interface, therefore buffer layers are utilized to prevent the inter-diffusion process. STO and yttria-stabilized zirconia (YSZ)/CeO 2 are such buffer layers that are commonly used to integrate epitaxial PZT films on Si substrates.…”
Section: Manuscriptmentioning
confidence: 99%
“…Integration on glass is of high importance in order to pave the way to integrate PZT on amorphous structures, such as SiO 2 that is commonly used in semiconductor devices and Mo/Si mirror coatings for extreme ultraviolet (EUV) photolithography. 10,11 Deposition of oxide films, including PZT, directly on Si substrates results in inter-diffusion of oxides into Si and formation of amorphous oxide layer in the substrate-film interface, therefore buffer layers are utilized to prevent the inter-diffusion process. STO and yttria-stabilized zirconia (YSZ)/CeO 2 are such buffer layers that are commonly used to integrate epitaxial PZT films on Si substrates.…”
Section: Manuscriptmentioning
confidence: 99%
“…These properties make it a promising candidate for transparent conducting electrodes, required for touch screens, and, potentially EUV adaptive optics. Furthermore, the high transparency in the EUV range is attractive because most optics require a protective top layer to protect them from the highly reactive environment, induced by radiation [15].…”
Section: Introductionmentioning
confidence: 99%
“…Nowadays piezoelectric ceramics and thin films are widely applied in sensors, actuators, ferroelectric memories, and energy harvesters. [1][2][3][4][5][6][7][8] Especially PbZr x Ti 1-x O 3 (PZT) is commonly used because of its remarkable piezoelectric properties both in ceramics and thin films. [9][10][11] One of the challenges in the application of piezoelectric materials is the hysteresis that manifests itself, for example, as positioning inaccuracy of actuators and energy loss in energy harvesting applications.…”
Section: Introductionmentioning
confidence: 99%