1990
DOI: 10.1111/j.1151-2916.1990.tb09793.x
|View full text |Cite
|
Sign up to set email alerts
|

Active‐to‐Passive Transition in the Oxidation of Silicon Carbide and Silicon Nitride in Air

Abstract: The active-to-passive transition in the oxidation of Sic and Si3NI was determined in a flowing air environment as a function of temperature and total pressure. The experimentally observed transition temperatures ranged from a low of 1347°C to a high of 1543°C for partial pressures of oxygen of 2.5 and 123.2 Pa, respectively. The Sic and Si3N4 samples had approximately the same transition point for a given pressure. In general, the higher the flow rate, the higher the transition temperature for a given pressure… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

6
99
0
2

Year Published

1993
1993
2016
2016

Publication Types

Select...
7
3

Relationship

0
10

Authors

Journals

citations
Cited by 249 publications
(107 citation statements)
references
References 7 publications
6
99
0
2
Order By: Relevance
“…Due to high viscocity of material fusant, gas volatilization causes general bulging of material. With decrease of sintering temperature, the "pits" formed after gas volatilization in fusant are preserved and dense closed pores appeared in material, thereby forming porous and light structure [9,10].…”
Section: Foaming Theorymentioning
confidence: 99%
“…Due to high viscocity of material fusant, gas volatilization causes general bulging of material. With decrease of sintering temperature, the "pits" formed after gas volatilization in fusant are preserved and dense closed pores appeared in material, thereby forming porous and light structure [9,10].…”
Section: Foaming Theorymentioning
confidence: 99%
“…Tabla IV: condIcIones Para la TransIcIón de oxIdacIón acTIVa-PasIVa TeórIca del sIc (47)(48)(49)(50) MATERIALES COMPUESTOS C/SIC PARA APLICACIONES ESTRUCTURALES DE ALTA TEMPERATURA. PARTE I: ESTABILIDAD TERMODINÁMICA Y QUÍMICA La velocidad de disolución del SiC inmerso en agua a 290ºC depende del pH y de la cantidad de oxígeno disuelto en el agua.…”
Section: 2-estabilidad Termodinámica Del Sicunclassified
“…The formation of a protective layer of SiO2 protects Si-based materials and coatings from further oxidation under conditions of moderate temperature (up to ≈1600°C) [57]. For both SiC and Si3N4, Vaughn and Maahs found the transition from passive oxidation protection to gaseous production of SiO (and mass loss) occurred at conditions of 1,347°C for an oxygen partial pressure of 2.5Pa and 1,543°C at 123.2Pa, indicating that increases in oxygen pressure elevated the maximum use temperature of the binary compounds [58]. Scramjet engines typically operate with dynamic pressures in the range of 24kPa to 96kPa [23].…”
Section: Figure 27 the Specific Yield Strength Of Some High Temperamentioning
confidence: 99%