2019
DOI: 10.1007/s10825-019-01344-0
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Adaptation of a compact SPICE level 3 model for oxide thin-film transistors

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Cited by 15 publications
(5 citation statements)
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“…When a device has a high contact resistance resulting from Schottky contact between source/drain electrode and oxide channel layers, a drain current of TFT decreases as a carrier injection between a source/drain electrode and the oxide channel layer is severely limited. On the contrary, Ohmic contact between the source/drain electrode and oxide channel layers gives better carrier injection with a lower contact resistance compared to the Schottky contact. Therefore, to compare the contact resistance ( R C ) of the three devices (Pt, Al/PEI, and Al contact), the TLM measurement was performed with the channel length of 50, 100, 200, 300, and 400 μm. Figure a–c shows the R C as a function of gate voltage, derived from the TLM measurements; all points in the TLM data were collected from nine devices.…”
Section: Resultsmentioning
confidence: 99%
“…When a device has a high contact resistance resulting from Schottky contact between source/drain electrode and oxide channel layers, a drain current of TFT decreases as a carrier injection between a source/drain electrode and the oxide channel layer is severely limited. On the contrary, Ohmic contact between the source/drain electrode and oxide channel layers gives better carrier injection with a lower contact resistance compared to the Schottky contact. Therefore, to compare the contact resistance ( R C ) of the three devices (Pt, Al/PEI, and Al contact), the TLM measurement was performed with the channel length of 50, 100, 200, 300, and 400 μm. Figure a–c shows the R C as a function of gate voltage, derived from the TLM measurements; all points in the TLM data were collected from nine devices.…”
Section: Resultsmentioning
confidence: 99%
“…To prove the effectiveness of the proposed pixel circuit against threshold voltage variations of the driving transistor, the circuit simulations were carried out in the Cadence Spectre using a previously developed a‐IGZO TFT model calibrated with experimental results [16]. The threshold voltage of the driving TFT, T 5 , is shifted ±30% around its nominal V TH of 0.5 V for all simulations.…”
Section: Resultsmentioning
confidence: 99%
“…However, the limitation of the model above is that it sets a specific limitation on the channel‐length range (L = 2–20 μm). Kandpal et al 7 employ a physical and empirical modeling approach for a‐IGZO SPICE model adaptation. This model is versatile for all oxide TFTs regardless of channel or dielectric material.…”
Section: Calibration Of the Adapted Spice Modelsmentioning
confidence: 99%
“…When compared to other available models, 7,12,14 the proposed adapted model addresses key effects, specifically the DIBL and the Kink Effect, and includes DOS model for trap states evident in amorphous and poly-crystalline channel materials. Jingrui Guo et al 12 used an analytical surface potential-based compact model.…”
Section: Model Validation For Level-62 Rpi Poly-si Tft Modelmentioning
confidence: 99%
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