Additional fluorine passivation to pyrolytic-N2O passivated ultrathin silicon oxide/Si(100) films

Abstract

To enhance the reliability of ultrathin silicon oxide/Si(100) films and clarify the effect of fluorine on it, in situ pyrolytic-gas passivation (PGP) using NF3 was simultaneously performed with the previously proposed PGP using N2O. As a result, the following synergistic effects of F and N passivation for the films were confirmed: The electrical characteristics, such as the time-dependent dielectric breakdown lifetime, potential barrier height energy of the oxide, and interface state density, were significantly improved. Quantitative analyses of F and N indicated that this is probably caused by microscopic structural changes in the oxide near the oxide-Si(100) substrate interface. It is, therefore, believed that F passivation effectively contributes to compensate the inconsistent-state bonding sites near the interface that remain with N passivation.

Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

“…There have been previous reports of applying HF passivation to SiO 2 or high-k oxide to form an H-terminated surface [20][21][22][23][24][25]. In this work, with HF-dipping treatment prior to the MoS 2 growth, the introduced H to the interface region would presumably satisfy the SiO 2 dangling bonds and cleave the MoS 2 /SiO 2 interface bonds.…”