Excess Si and passivating N and F atoms near the pyrolytic-gas-passivated ultrathin silicon oxide film/Si(100) interface

Journal of Applied Physics

2008

Correlations between reliability and interfacial structure changes of ultrathin silicon oxide gate films grown at 700 °C with in situ pyrolytic-gas passivation (PGP) were investigated. PGP uses a little pyrolytic N2O and NF3 during ultradry oxidation with pure O2 at less than 1 ppb humidity and has a potential for application to future low-temperature device fabrication processes due to the reliability retention of the films. It was found that the reliability for the 700 °C grown PGP films is much like that of the 800–900 °C grown ones, with an interface state density of less than 1–3×1010/eV cm2 maintained. Quantitative analyses of N, F, and O indicated that this is probably due to microscopic, interfacial structure changes, that is, N and F passivation effectively contributes to compensate inconsistent-state bonding sites and to generate a high-density structure with few dangling bonds.

Effects of N and F passivation on the reliability and interface structure of 700 °C grown ultrathin silicon oxide/Si(100) gate films

Journal of Applied Physics

2008

1.5 - nm -thick silicon oxide gate films grown at 150°C using modified reactive ion beam deposition with pyrolytic-gas passivation

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

2007

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Articles you may be interested inFundamental reliability of 1.5 nm -thick silicon oxide gate films grown at 150 ° C by modified reactive ion beam deposition J. Vac. Sci. Technol. A 26, 36 (2008); 10.1116/1.2812430 Density and nitrogen content of ultrathin silicon oxide gate films grown using in situ pyrolytic-gas passivation J. Appl. Phys. 93, 4902 (2003); 10.1063/1.1562011Effects of in situ pyrolytic-gas passivation on reliability of ultrathin silicon oxide gate films

Fundamental reliability of 1.5-nm-thick silicon oxide gate films grown at 150°C by modified reactive ion beam deposition

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

2007

The reliability of 1.5-nm-thick silicon oxide gate films grown at 150°C by modified reactive ion beam deposition (RIBD) with in situ pyrolytic-gas passivation (PGP) using N2O and NF3 was investigated. RIBD uses low-energy-controlled reactive, ionized species and potentializes low-temperature film growth. Although the oxide films were grown at a low temperature of 150°C, their fundamental indices of reliability, such as the time-dependent dielectric breakdown lifetime and interface state density, were almost equivalent to those of oxide films grown at 850°C using a furnace. This is probably due to localized interfacial N and F atoms. The number density of interfacial N atoms was about seven times larger than that for the furnace-grown oxide films, and this is a key factor for improving the reliability through the compensation of residual inconsistent-state bonding sites.