Addressable electron spin resonance using donors and donor molecules in silicon

Hile, Samuel J.; Fricke, Lukas; House, Matthew; Peretz, Eldad; Chen, Chin Yi; Wang, Yu; Broome, Matthew A.; Gorman, Samuel K.; Keizer, J. G.; Rahman, Rajib; Simmons, M. Y.

doi:10.1126/sciadv.aaq1459

Cited by 42 publications

(66 citation statements)

References 54 publications

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“…Figure 6A shows example noise PSDs of the frequency shift δω e ( t ) caused by Overhauser fields, each calculated for five different values of T wait for one isotopic configuration. With frequent electron interactions (short T wait ), the spectrum approaches a 1/ω 2 power law; in this case, the noise is dominated by a Brownian random walk due to “ionization shock” ( 31 , 34 ), i.e., the sudden reconfiguration in effective magnetic field seen by each nuclear spin due to the diabatic appearance or disappearance of the neutralizing electron. The forcible removal of the hyperfine-coupled electron is unique to our experiment; however, similar “sudden shock” effects occur also in conventional pulsed-electron paramagnetic resonance, when a fast rotation of the electron spin causes a sudden reorientation of the hyperfine field on the nearby nuclei ( 35 ).…”

Section: Resultsmentioning

confidence: 99%

Controllable freezing of the nuclear spin bath in a single-atom spin qubit

et al. 2020

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The quantum coherence and gate fidelity of electron spin qubits in semiconductors are often limited by nuclear spin fluctuations. Enrichment of spin-zero isotopes in silicon markedly improves the dephasing time T2*, which, unexpectedly, can extend two orders of magnitude beyond theoretical expectations. Using a single-atom 31P qubit in enriched 28Si, we show that the abnormally long T2* is due to the freezing of the dynamics of the residual 29Si nuclei, caused by the electron-nuclear hyperfine interaction. Inserting a waiting period when the electron is controllably removed unfreezes the nuclear dynamics and restores the ergodic T2* value. Our conclusions are supported by a nearly parameter-free modeling of the 29Si nuclear spin dynamics, which reveals the degree of backaction provided by the electron spin. This study clarifies the limits of ergodic assumptions in nuclear bath dynamics and provides previously unidentified strategies for maximizing coherence and gate fidelity of spin qubits in semiconductors.

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Section: Resultsmentioning

confidence: 99%

Controllable freezing of the nuclear spin bath in a single-atom spin qubit

et al. 2020

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“…This is a two level system that can be used as a qubit and we name it spin-1/2 qubit to distinguish it from other types of spin qubits. To manipulate this type of qubit, microwave (MW) bursts via an antenna were used to generate oscillating magnetic field [30,31], as illustrated in Fig.1 (f) and (h). This approach is called electron spin resonance (ESR) for controlling electron spins or nuclear magnetic resonance (NMR) for controlling nuclear spins.…”

Section: Spin-1/2 Qubitmentioning

confidence: 99%

“…(e), (f) and (g) are images and schematics for the device fabricated by STM hydrogen lithography (Adapted from ref. [30]).…”

Section: Introductionmentioning

confidence: 99%

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Semiconductor quantum computation

Zhang

Cao

et al. 2018

National Science Review

150

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Semiconductors, a significant type of material in the information era, are becoming more and more powerful in the field of quantum information. In the last decades, semiconductor quantum computation was investigated thoroughly across the world and developed with a dramatically fast speed. The researches vary from initialization, control and readout of qubits, to the architecture of fault tolerant quantum computing. Here, we first introduce the basic ideas for quantum computing, and then discuss the developments of single-and twoqubit gate control in semiconductor. Till now, the qubit initialization, control and readout can be realized with relatively high fidelity and a programmable two-qubit quantum processor was even demonstrated. However, to further improve the qubit quality and scale it up, there are still some challenges to resolve such as the improvement of readout method, material development and scalable designs. We discuss these issues and introduce the forefronts of progress. Finally, considering the positive trend of the research on semiconductor quantum devices and recent theoretical work on the applications of quantum computation, we anticipate that semiconductor quantum computation may develop fast and will have a huge impact on our lives in the near future.

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“…This approach assumes the use of hydrogen monolayer as a resist, which can be easily removed with an STM tip [1][2][3][4] . Recently, the hydrogen depassivation lithography has evolved into a wellestablished technique applied with success to the creation of a single atom transistor 5 and elements of the quantum computer 6,7 .…”

Section: Introductionmentioning

confidence: 99%

Local removal of silicon layers on Si(1 0 0)-2 × 1 with chlorine-resist STM lithography

Павлова

Shevlyuga

Andryushechkin

et al. 2020

Applied Surface Science

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We report the realization of STM-based lithography with silicon layers removal on the chlorinated Si(100)-2×1 surface at 77 K. In contrast to other STM lithography studies, we were able to remove locally both chlorine and silicon atoms. Most of the etched pits have a lateral size of 10-20Å and a depth of 1-5Å. In the pits in which the STM image with atomic resolution is obtained, the bottom is mainly covered with chlorine. Some pits contain chlorine vacancies. Mechanisms of STMinduced removal of silicon and chlorine atoms on Si(100)-2×1-Cl are discussed and compared with the well-studied case of STM-induced hydrogen desorption on Si (100)-2×1-H. The results open up new possibilities of the three-dimensional local etching with STM lithography. * pavlova@kapella.gpi.ru

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Addressable electron spin resonance using donors and donor molecules in silicon

Abstract: Built-in hyperfine couplings of donor qubits engineered by precision placement promote addressable electron spin resonance.

Cited by 42 publications

References 54 publications

Controllable freezing of the nuclear spin bath in a single-atom spin qubit

Controllable freezing of the nuclear spin bath in a single-atom spin qubit

Semiconductor quantum computation

Local removal of silicon layers on Si(1 0 0)-2 × 1 with chlorine-resist STM lithography

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