Addressing the stability challenges of TiO<sub><i>x</i></sub>-based passivating contacts for high-efficiency c-Si solar cells

Shehata, Mohamed M.; Truong, Thien N.; Bartholazzi, Gabriel; Macdonald, Daniel H.; Black, Lachlan E.

doi:10.1039/d3ta05951k

Cited by 5 publications

(3 citation statements)

References 57 publications

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“…Although the introduction of a TCO layer helps reduce ρ c by preventing the formation of AgO, its impact on the passivation quality should be considered. Several studies have indicated that sputtering TCO can cause damage to the underlying layers, , thereby degrading the passivation quality. Shehata et al demonstrated that introducing an ALD-deposited ZnO layer with a thickness of 3 nm as a buffer layer before sputtering ITO helps prevent permanent sputtering damage and maintains the passivation quality.…”

Section: Resultsmentioning

confidence: 99%

“…To maintain the passivation quality of TiO x -based contacts during metallization, recent studies have proposed effective solutions to this issue. Shehata et al 57 introduced an ALD-deposited ZnO buffer layer to mitigate the damage caused by metallization. They reported that a ZnO buffer layer, when sufficiently thick (13 nm or more), effectively prevents degradation resulting from metallization, thereby improving the stability and overall performance of the TiO x -based contacts.…”

Section: Resultsmentioning

confidence: 99%

“…Several studies have indicated that sputtering TCO can cause damage to the underlying layers, , thereby degrading the passivation quality. Shehata et al demonstrated that introducing an ALD-deposited ZnO layer with a thickness of 3 nm as a buffer layer before sputtering ITO helps prevent permanent sputtering damage and maintains the passivation quality. This approach is worth considering for maintaining the passivation quality of the TiO x -based heterojunction structure while optimizing ρ c .…”

Section: Resultsmentioning

confidence: 99%

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Investigation of H₂ Plasma Incorporated ALD-TiO_x Films as Hole-Selective Passivating Contacts in Crystalline Silicon Solar Cells

Chen,

Berriel,

Currie

et al. 2024

ACS Appl. Energy Mater.

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In this work, we present an integrated method for the deposition of TiO x through introducing H 2 plasma pulses into the atomic layer deposition process. The potential of TiO x films deposited through this process as a hole-selective passivating contact in crystalline silicon solar cells was evaluated in terms of passivation quality, carrier selectivity, electrical properties, and optical performance. The combination of the growth process with post-H 2 plasma treatment yields TiO x films with superior passivation quality, carrier selectivity, and electrical properties. Simulations demonstrate the potential of our TiO x -based heterojunction as opposed to hydrogenated amorphous and polycrystalline silicon-based heterojunctions. Finally, we report that the performance of n-type tunnel oxide passivated contact cells can be further improved through replacing the front homojunction with our TiO x -based heterojunction, referred to as transition metal oxide-integrated polycrystalline silicon on oxide solar cells in our work.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Investigation of H₂ Plasma Incorporated ALD-TiO_x Films as Hole-Selective Passivating Contacts in Crystalline Silicon Solar Cells

Chen,

Berriel,

Currie

et al. 2024

ACS Appl. Energy Mater.

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Transparent Hole‐Selective Molybdenum Oxide Passivating Contact with Chlorine‐Based Interlayer Enabling 22.5% Efficient Silicon Solar Cells

Bartholazzi,

Shehata,

Samundsett

et al. 2024

Solar RRL

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The need to increase transparency in existing passivating contacts for crystalline silicon solar cells has motivated the development of transparent contacts based on transition metal oxides (TMOs). Among hole‐selective materials, molybdenum oxide (MoOx) has achieved the greatest success so far. However, despite providing low contact resistivity, MoOx relies on an intrinsic hydrogenated amorphous silicon (a‐Si:H(i)) interlayer to achieve high levels of surface passivation and thus high open‐circuit voltage at a device level, partially defeating the objective of improved transparency. Herein, we report unprecedented performance for a‐Si:H‐free MoOx‐based contacts by employing an alternative passivating interlayer based on a well‐engineered chlorine‐containing Al‐alloyed titanium oxide/titanium dioxide (AlyTiOx/TiO2 )stack. The resulting AlyTiOx/TiO2/MoOx stack achieved record levels of passivation, reaching J0 values as low as 16 fA cm−2, closer to values reported for a‐Si:H‐based contacts, while maintaining lower contact resistivity, well below 100 mΩ cm−2. Additionally, the stack presents improved transparency compared to a‐Si:H‐based contacts, with gains in short‐circuit current density of at least 0.8 mA cm−2. The work pushes the performance of hole‐selective passivating contacts based on TMOs to new levels, enabling a record efficiency of 22.53% for cells with fully transparent hole‐selective passivating contacts. This work serves as an important stepping stone toward low‐thermal‐budget, simple manufacturing of high‐efficiency solar cells.

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Universal interface engineering method for applying transition metal oxides in silicon heterojunction solar cell

Cao,

Procel,

Zhao

et al. 2024

Solar Energy Materials and Solar Cells

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Addressing the stability challenges of TiO_x-based passivating contacts for high-efficiency c-Si solar cells

Abstract: Our research unveils strategies for developing exceptional TiOx-based passivating contacts, potentially replacing traditional Si-based ones with highly stable, transparent alternatives.

Cited by 5 publications

References 57 publications

Investigation of H₂ Plasma Incorporated ALD-TiO_x Films as Hole-Selective Passivating Contacts in Crystalline Silicon Solar Cells

Investigation of H₂ Plasma Incorporated ALD-TiO_x Films as Hole-Selective Passivating Contacts in Crystalline Silicon Solar Cells

Transparent Hole‐Selective Molybdenum Oxide Passivating Contact with Chlorine‐Based Interlayer Enabling 22.5% Efficient Silicon Solar Cells

Universal interface engineering method for applying transition metal oxides in silicon heterojunction solar cell

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Addressing the stability challenges of TiOx-based passivating contacts for high-efficiency c-Si solar cells

Abstract: Our research unveils strategies for developing exceptional TiOx-based passivating contacts, potentially replacing traditional Si-based ones with highly stable, transparent alternatives.

Cited by 5 publications

References 57 publications

Investigation of H2 Plasma Incorporated ALD-TiOx Films as Hole-Selective Passivating Contacts in Crystalline Silicon Solar Cells

Investigation of H2 Plasma Incorporated ALD-TiOx Films as Hole-Selective Passivating Contacts in Crystalline Silicon Solar Cells

Transparent Hole‐Selective Molybdenum Oxide Passivating Contact with Chlorine‐Based Interlayer Enabling 22.5% Efficient Silicon Solar Cells

Universal interface engineering method for applying transition metal oxides in silicon heterojunction solar cell

Contact Info

Product

Resources

About

Addressing the stability challenges of TiO_x-based passivating contacts for high-efficiency c-Si solar cells

Investigation of H₂ Plasma Incorporated ALD-TiO_x Films as Hole-Selective Passivating Contacts in Crystalline Silicon Solar Cells

Investigation of H₂ Plasma Incorporated ALD-TiO_x Films as Hole-Selective Passivating Contacts in Crystalline Silicon Solar Cells