Adhesion and structural changes of multi-layered and multi-doped a-C:H films during annealing

Oral, B.; Ernst, Karl‐Heinz; Schmutz, C.

doi:10.1016/0925-9635(95)00506-4

Cited by 30 publications

(5 citation statements)

References 18 publications

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“…The thermal residual stress in the DLC film that was caused by the differences in thermal expansion coefficients between the S-phase and DLC film was approximately −0.6 GPa for both the DCPN and ASPN methods under the condition for the Young's modulus that is shown in Table 5. The thermal expansion coefficient is 2.0 × 10 −6 /K 24) and Poisson's ratio is 0.2 24) . This compressive thermal residual stress in the DLC film on the S-phase was 19% of the residual stress of the DLC.…”

Section: Residual Stress On the S-phases In The Dlc Filmsmentioning

confidence: 99%

X-Ray Residual Stress in the S-Phase of Stainless Steel Nitrided by a Plasma Nitriding Method and Residual Stress Measurement of a DLC Film Deposited on the S-Phase

Miki¹,

Nishimoto

Tamiya

2018

J. Soc. Mat. Sci., Japan

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The S-phases (γN-phases) of JIS standard SUS304 steel were prepared via direct current plasma nitriding (DCPN) and active screen plasma nitriding (ASPN). Furthermore, diamond-like carbon (DLC) films were prepared on these Sphases via plasma chemical vapor deposition (PCVD). The nitride layers included the γ'Fe4N phase. The X-ray stress constant K for the nitride layers was evaluated using γN (200) + γ'Fe4N (200) diffraction with CrKα characteristic X-rays. The γN (200) + γ'Fe4N (200) diffraction angles 2θ of the DCPN and ASPN powders were 73.49° and 72.98°, respectively. The X-ray stress constants, E / (1 + ν), of the γN (200) + γ'Fe4N (200) phase that was nitrided using DCPN and ASPN were 202 and 153 GPa, respectively, and the K values of the same were −2365 and −1809 MPa/deg, respectively. The Xray residual stresses of these S-phases were approximately −5.3 and −2.6 GPa, respectively. However, Raman microprobe spectroscopy was used for residual stress measurements of the DLC films that were deposited on these S-phases. The Raman spectra of the DLC films were classified into the disorder peak D' at 1150 cm −1 , the D peak, and the graphite peak G. The residual stresses in the DLC films on these S-phases, as estimated from the Raman shift of the G peak for DCPN and ASPN, were −3.2 and −3.0 GPa, respectively. The hardness of the DLC films was determined using the nanoindentation method, and the films were found to exhibit high levels pf hardness. The increase in compressive residual stresses in the DLC films could have caused the decrease in contact areas and the indentation depth of the indenter, which may have increased the value of Young's modulus and hardness of the DLC films.

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Section: Residual Stress On the S-phases In The Dlc Filmsmentioning

confidence: 99%

X-Ray Residual Stress in the S-Phase of Stainless Steel Nitrided by a Plasma Nitriding Method and Residual Stress Measurement of a DLC Film Deposited on the S-Phase

Miki¹,

Nishimoto

Tamiya

2018

J. Soc. Mat. Sci., Japan

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“…The interface played an important role for high adhesion films deposition. 22 Therefore, the effect of interlayer and formation mechanism of DLC/substrate interface is important to improve the adhesion, it worth to be studied in details.…”

Section: Introductionmentioning

confidence: 99%

“…The multi-elements doped a-C:H films with multi-layered buffer structures have been studied by Oral et al . 22 It is discovered that the (Si:Ti)C/TiC interface is the weakest interface for adhesion. The interface played an important role for high adhesion films deposition.…”

Section: Introductionmentioning

confidence: 99%

Effects of SiN_x interlayer on characterisation of amorphous diamond-like carbon films

Chen

Shih

Shen

et al. 2015

Materials Science and Technology

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The magnetron sputtering amorphous diamond-like carbon film is successfully deposited by SiNx interlayer approach. The scanning electron microscopy study reveals the creation of high uniform surface micrograph diamond-like carbon films with SiNx interlayer. For comparison, diamond-like carbon films with different interlayers are also grown. The Raman spectra are analyzed in order to characterize the stressed induce peak shifts of the films. The interactions of C atom with Si(100) and SiNx surface are studied by density functional theory simulation. The effects of interlayers on the films deposition and the considering deposition mechanism are discussed. It is suggested that the diamond-like carbon and SiNx bilayer structure can help to render applications in protective coatings and high quality silicon on diamond related radiation tolerance devices.

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“…20 Ong et al 21 found that DLC films deposited by pulsed-laser ablation showed a transition from the diamond-like to graphite at a temperature as low as 100°C. It was reported by many authors that composite DLC coatings, 22,23 i.e., incorporating other elements such as nitrogen, boron, silicon, oxygen, fluorine, or some metals, have been shown to overcome some intrinsic application difficulties of DLC, such as reducing internal stresses, enhancing adhesion and mechanical properties, modifying surface energy, and improving thermal stability. One particular class of modified DLC coatings are diamond-like nanocomposite ͑DLN͒ films.…”

Section: Introductionmentioning

confidence: 99%

Annealing effect on electron field-emission properties of diamond-like nanocomposite films

Ding

Dong

Tay

et al. 2000

Journal of Applied Physics

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Articles you may be interested inTemperature effect on field emission properties and microstructures of polymer-based carbon films J. Appl. Phys. 98, 074906 (2005); 10.1063/1.2084310 Electron field emission properties of gamma irradiated microcrystalline diamond and nanocrystalline carbon thin films Study on improved electron emission characteristics of micropatterned diamond-like carbon filmsThe field-emission properties of a Si-O bond-containing diamond-like nanocomposite ͑DLN͒ film were investigated as a function of annealing temperature (T a ). It was found that with increasing T a the emission threshold voltage decreased gradually. After annealing at T a ϭ500°C, the emission current decreased significantly. At T a ϭ700°C, however, the field-emission properties of the DLN film improved greatly, the threshold field became very low ͑ϳ1.5 V/m͒, and the emission current rather high ͑e.g., ϳ2.3 A/mm 2 at an electric field of 22 V/m͒. The structural variation of the film after annealing at different temperatures was monitored by ultraviolet Raman spectroscopy, spectroscopic ellipsometry, atomic-force microscopy, and electrical resistivity measurements. By using a three-step model: ͑i͒ electron injection from the substrate, ͑ii͒ electron transport through the film, and ͑iii͒ electron emission at the film surface, the annealing effect on field-emission properties of the DLN film were qualitatively interpreted. It is believed that the threshold electric field is determined by the local electron affinity on the film surface, while the emission current is mainly limited by electron injection and transport processes.

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Adhesion and structural changes of multi-layered and multi-doped a-C:H films during annealing

Cited by 30 publications

References 18 publications

X-Ray Residual Stress in the S-Phase of Stainless Steel Nitrided by a Plasma Nitriding Method and Residual Stress Measurement of a DLC Film Deposited on the S-Phase

X-Ray Residual Stress in the S-Phase of Stainless Steel Nitrided by a Plasma Nitriding Method and Residual Stress Measurement of a DLC Film Deposited on the S-Phase

Effects of SiN_x interlayer on characterisation of amorphous diamond-like carbon films

Annealing effect on electron field-emission properties of diamond-like nanocomposite films

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Adhesion and structural changes of multi-layered and multi-doped a-C:H films during annealing

Cited by 30 publications

References 18 publications

X-Ray Residual Stress in the S-Phase of Stainless Steel Nitrided by a Plasma Nitriding Method and Residual Stress Measurement of a DLC Film Deposited on the S-Phase

X-Ray Residual Stress in the S-Phase of Stainless Steel Nitrided by a Plasma Nitriding Method and Residual Stress Measurement of a DLC Film Deposited on the S-Phase

Effects of SiNx interlayer on characterisation of amorphous diamond-like carbon films

Annealing effect on electron field-emission properties of diamond-like nanocomposite films

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Effects of SiN_x interlayer on characterisation of amorphous diamond-like carbon films