Adhesion Control between Resist and Photomask Blank

Kurihara, Masaaki; Hatakeyama, Sho; Yoshida, Kouji; Abe, Makoto; Totsukawa, Daisuke; Morikawa, Yasutaka; Mohri, Hiroshi; Hoga, Morihisa; Hayashi, Naoya; Ohtani, Hiroyuki; Fujihira, Masamichi

doi:10.1143/jjap.48.06fg01

Cited by 3 publications

(2 citation statements)

References 8 publications

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“…The direct peeling (DP) method [15] was adopted to evaluate mechanical effects of a photochemical graft reaction of the PrM on collapsing resist patterns. An illustration of the DP method to collapse a pillar resist pattern by scanning a probe reversibly at a direction parallel to a substrate Fig.…”

Section: Mechanically Enhanced Adhesion Of Resist Pattern By Prmmentioning

confidence: 99%

Reactive-monolayer-assisted Thermal Nanoimprint Lithography

Kubo

Nakagawa

2012

J. Photopol. Sci. Technol.

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This article gives an overview of reactive-monolayer-assisted thermal nanoimprint lithography (R-TNIL) for the fabrication of patterned metal thin layers on substrates by simple wet etching using a thermoplastic polymer resist layer assisted by photochemically grafted polymer layer. A photoreactive monolayer causing a photoinduced graft reaction on the metal surface anchors interfacial resist polymers, resulting in the suppression of thermally induced dewetting of the resist layer and the improvement of lateral pattern resolution of metal thin layers. Line widths of metal patterns could be tuned by controlled side etching. Enhanced adhesion of resist layers was revealed by lateral force curves measured by scanning probe microscopy. It was demonstrated as an application that transparent conductive substrates having metal mesh structures were fabricated by R-TNIL. We also demonstrated R-TNIL involving electrodeposition, which allowed the preparation of metal patterns with controlled aspect ratio. It was proved that the photoreactive monolayer played important roles to fabricate submicrometer patterns of metal thin layers.

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Section: Mechanically Enhanced Adhesion Of Resist Pattern By Prmmentioning

confidence: 99%

Reactive-monolayer-assisted Thermal Nanoimprint Lithography

Kubo

Nakagawa

2012

J. Photopol. Sci. Technol.

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“…Although some research has been performed to quantify the resist's adhesion on a material [1], the resist lift-off mechanisms are still poorly understood.…”

Section: Introductionmentioning

confidence: 99%

Surface Preparations Impact on 248nm Deep UV Photo Resists Adhesion during a Wet Etch

Foucaud

Garnier

Joseph

et al. 2012

SSP

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Integrated circuits manufacturing still requires several wet etching operations in presence of photo resist. They are usually used to define the gate oxides or metal in a high k metal gate, gate first integration scheme. During this process step, the resist is used for masking and prevents the underneath material from being etched away. Wet treatments are preferred to plasma etching to perform this operation. Indeed, a smooth channels surface is mandatory to obtain a high carriers mobility. It is then critical to avoid any resist lift-off during the wet treatment in order to guarantee the underlying layers integrity. The observation of the lift-off phenomenon (figure 1) points out two possible root causes: 1) a lateral degradation of the covalent bonds at the interface between the polymer and the underlying material, and 2) a vertical resist degradation, due to the penetration of the etching chemicals into the resist down to the underlying material. Previous observations tend to link the lift-off severity to the bake temperature and the oxidation state of the surface on which the resist is coated.

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