Adhesion study of low-k/Si system using 4-point bending and nanoscratch test

Damayanti, M.; Widodo, J.; Sritharan, Thirumany; Mhaisalkar, Subodh; Lu, Wenquan; Gan, Zhenghao; Zeng, Kaiyang; Hsia, L. C.

doi:10.1016/j.mseb.2005.03.030

Cited by 42 publications

(18 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Values have been determinated experimentally (e.g., by a four points bending test [2]) and literature inputs are used in this work. It should be noticed that a large range of values is found according to the source [13][14] which underlines both the property dependence to process conditions and the difficulty to measure precisely such data.…”

Section: Iv-application Casementioning

confidence: 99%

“…To face this reduction and ensure higher performance, a new kind of dielectric materials has been introduced recently in integrated circuit (IC). Unfortunately, these materials, called low-k or ultra low-k due to their low dielectric constant (k), have poor mechanical and adhesion properties [1][2]. These issues, added to the stress induced by front end (FEoL) processes (thermal mismatch, intrinsic stresses, etc.)…”

Section: I-introductionmentioning

confidence: 99%

See 1 more Smart Citation

Numerical Analysis of the Reliability of Cu/low-k Bond Pad Interconnections Under Wire Pull Test: Application of a 3D Energy Based Failure Criterion

Gallois-Garreignot¹,

Fiori

Orain³

et al. 2007

2007 International Conference on Thermal, Mechanical and Multi-Physics Simulation Experiments in Microelectronics and Micro-Sys

View full text Add to dashboard Cite

Due to size reduction in die manufacturing and introduction of brittle dielectric materials, crack related failures occur currently, mainly in interconnect levels. By means of Finite Element (FE) simulations, an energy based failure criterion named Nodal Release Energy (NRE) Method, inspired by the so-called Area Release Energy (ARE) one developed by Philips Applied Technologies, is used to numerically predict the mechanical related failures. More precisely, the failure index is applied to investigate wire bonding induced peeling. In this paper, the NRE method is presented and its added value to forecast delamination failures in a typical microelectronics stack is demonstrated.The NRE method is related to fracture mechanics and founded on propagation approach. Two FE calculations are used to evaluate the energy quantity: an uncracked and cracked one. In the latter model, a virtual crack is inserted. Aiming to compare the NRE values with known physical quantities experimentally measured such as critical adhesion energy, a relation bridging the gap from NRE to the Energy Release Rate is given. This relation is based on the crack extension method and relates to Griffith theory. The accuracy of the NRE method is investigated through comparisons with 2D and 3D analytical cases. Results show that the method provides a good approximation. The NRE behaviour with respect to key numerical parameters will be studied.At last, a typical bond pad structure under a wire pull test is simulated. Both stress and energy based analyses are carried out. The critical interface is investigated with both post processing methods. Results based on the energy criterion show that delamination interface is in agreement with experimental observations, in contrast to stress based values. However, it is also shown that simulation results can depend on the prescribed crack length, suggesting a accurate definition of the cracked model. The main assumptions done in this study are discussed, trying to define the associated uncertainties, particularly residual stress and crack morphology features. Finally, the added insights provided by NRE method and its ability to help in design and process development for advanced IC technologies are demonstrated.

show abstract

Section: Iv-application Casementioning

confidence: 99%

Section: I-introductionmentioning

confidence: 99%

Numerical Analysis of the Reliability of Cu/low-k Bond Pad Interconnections Under Wire Pull Test: Application of a 3D Energy Based Failure Criterion

Gallois-Garreignot¹,

Fiori

Orain³

et al. 2007

2007 International Conference on Thermal, Mechanical and Multi-Physics Simulation Experiments in Microelectronics and Micro-Sys

View full text Add to dashboard Cite

show abstract

“…Moreover, to meet continuous tighter specifications (lower RC time delay ... ), new dielectric materials, the so-called Low-K materials due to their low dielectric constant (k), have been introduced. Unfortunately, these materials have poor mechanical and adhesion properties [4][5] which affect die reliability and cracks are commonly observed at the interconnect level.…”

Section: Introductionmentioning

confidence: 99%

Package induced low-k delaminations: Numerical developments and experimental investigations to address FEBE compatibility fracture phenomena.

Gallois-Garreignot

Fiori

Nélias

2009

EuroSimE 2009 - 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelect

View full text Add to dashboard Cite

show abstract

“…However, more severe stress involving chip packaging can induce interfacial failures 4 . Simple PECVD deposition of bulk ULK directly on SiCN does not provide adequate interfacial strength based upon 4-point bending measurement 5,6 . It was found that the interfacial failure was mostly a-near interface cohesive failure in the ULK.…”

Section: Introductionmentioning

confidence: 99%

Interfacial characterization of ultra low-k film (kappa=2.55) with time of flight secondary ion mass spectrometry (TOF-SIMS)

Widodo¹,

Xing²,

Mo³

et al. 2008

2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Self Cite

View full text Add to dashboard Cite

Interfacial characterization of ultra low-k film with the layer underneath is very important for reliable manufacturing of ultra low-k film. In this study, we proposed a new application of TOF-SIMS to predict the interfacial behavior of the ultra low-k with the layer underneath. Strong correlation between carbon intensity at the bottom interface with the adhesion energy of the ultra low-k with the layer underneath is observed. We also observed a linear correlation between the quantified carbon peak intensity and the adhesion energy.

show abstract

Adhesion study of low-k/Si system using 4-point bending and nanoscratch test

Cited by 42 publications

References 14 publications

Numerical Analysis of the Reliability of Cu/low-k Bond Pad Interconnections Under Wire Pull Test: Application of a 3D Energy Based Failure Criterion

Numerical Analysis of the Reliability of Cu/low-k Bond Pad Interconnections Under Wire Pull Test: Application of a 3D Energy Based Failure Criterion

Package induced low-k delaminations: Numerical developments and experimental investigations to address FEBE compatibility fracture phenomena.

Interfacial characterization of ultra low-k film (kappa=2.55) with time of flight secondary ion mass spectrometry (TOF-SIMS)

Contact Info

Product

Resources

About